MMDT2907A
PNP Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
A suffix of "-C" specifies halogen-free
* Features
8o
.055(1.40)
.047(1.20)
o
0
.026TYP
(0.65TYP)
.021REF
(0.525)REF
Power dissipation
PCM : 0.15 W (Tamp.= 25 C)
Collector current
O
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
.018(0.46)
.010(0.26)
ICM : -0.6 A
.014(0.35)
.006(0.15)
.006(0.15)
.003(0.08)
C2
B1
E 1
Collector-base voltage
.087(2.20)
.079(2.00)
.004(0.10)
.000(0.00)
V(BR)CBO : -60 V
Operating & Storage junction Temperature
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
O
O
E 2
B2
C1
Tj, Tstg : -55 C~ +150 C
Marking: K2F, 2F
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -10μA, IE=0
Ic= -10mA, IB=0
IE=-10μA, IC=0
VCB=-50 V , IE=0
MIN
-60
-60
-5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
-0. 01
-0. 01
μA
μA
Emitter cut-off current
IEBO
VEB= -3V ,
IC=0
hFE(1)
VCE=-10V, IC= -0.1mA
VCE=-10V, IC= -1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC= -150mA
VCE=-10V, IC=-500mA
IC=-150 mA, IB=-15mA
IC=-500 mA, IB=- 50mA
IC=-150 mA, IB=-15mA
IC=-500 mA, IB= -50mA
VCE=-20V, IC= -50mA
f=100MHz
75
100
100
100
50
hFE(2)
DC current gain
hFE(3)
hFE(4)
300
hFE(5)
VCE(sat)1
-0.4
-1.6
-1.3
-2.6
V
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)2
VBE(sat)1
VBE(sat)2
200
MHz
pF
fT
Cob
Cib
VCB=-10V, IE= 0
Output Capacitance
8
f=1MHz
VEB=-2V, IC= 0
Input Capacitance
30
pF
f=1MHz
Delay time
Rise time
10
40
nS
nS
td
tr
VCC=-30V,
IC=-150mA,IB1=-15mA
Storage time
Fall time
225
60
nS
nS
tS
tf
VCC=-6V, IC=-150mA
IB1= IB2= -15mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2007 Rev. C
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