5秒后页面跳转
MMDT2907A PDF预览

MMDT2907A

更新时间: 2024-11-02 10:51:59
品牌 Logo 应用领域
SECOS 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 459K
描述
PNP Silicon Multi-Chip Transistor

MMDT2907A 数据手册

 浏览型号MMDT2907A的Datasheet PDF文件第2页浏览型号MMDT2907A的Datasheet PDF文件第3页 
MMDT2907A  
PNP Silicon  
Elektronische Bauelemente  
Multi-Chip Transistor  
RoHS Compliant Product  
SOT-363  
A suffix of "-C" specifies halogen-free  
* Features  
8o  
.055(1.40)  
.047(1.20)  
o
0
.026TYP  
(0.65TYP)  
.021REF  
(0.525)REF  
Power dissipation  
PCM : 0.15 W (Tamp.= 25 C)  
Collector current  
O
.053(1.35)  
.045(1.15)  
.096(2.45)  
.085(2.15)  
.018(0.46)  
.010(0.26)  
ICM : -0.6 A  
.014(0.35)  
.006(0.15)  
.006(0.15)  
.003(0.08)  
C2  
B1  
E 1  
Collector-base voltage  
.087(2.20)  
.079(2.00)  
.004(0.10)  
.000(0.00)  
V(BR)CBO : -60 V  
Operating & Storage junction Temperature  
.043(1.10)  
.035(0.90)  
.039(1.00)  
.035(0.90)  
O
O
E 2  
B2  
C1  
Tj, Tstg : -55 C~ +150 C  
Marking: K2F, 2F  
Dimensions in inches and (millimeters)  
Electrical Characteristics( Tamb=25OC unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -10μAIE=0  
Ic= -10mAIB=0  
IE=-10μAIC=0  
VCB=-50 V , IE=0  
MIN  
-60  
-60  
-5  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
-0. 01  
-0. 01  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB= -3V ,  
IC=0  
hFE(1)  
VCE=-10V, IC= -0.1mA  
VCE=-10V, IC= -1mA  
VCE=-10V, IC=-10mA  
VCE=-10V, IC= -150mA  
VCE=-10V, IC=-500mA  
IC=-150 mA, IB=-15mA  
IC=-500 mA, IB=- 50mA  
IC=-150 mA, IB=-15mA  
IC=-500 mA, IB= -50mA  
VCE=-20V, IC= -50mA  
f=100MHz  
75  
100  
100  
100  
50  
hFE(2)  
DC current gain  
hFE(3)  
hFE(4)  
300  
hFE(5)  
VCE(sat)1  
-0.4  
-1.6  
-1.3  
-2.6  
V
V
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
CE(sat)2  
VBE(sat)1  
VBE(sat)2  
200  
MHz  
pF  
fT  
Cob  
Cib  
VCB=-10V, IE= 0  
Output Capacitance  
8
f=1MHz  
VEB=-2V, IC= 0  
Input Capacitance  
30  
pF  
f=1MHz  
Delay time  
Rise time  
10  
40  
nS  
nS  
td  
tr  
VCC=-30V,  
IC=-150mA,IB1=-15mA  
Storage time  
Fall time  
225  
60  
nS  
nS  
tS  
tf  
VCC=-6V, IC=-150mA  
IB1= IB2= -15mA  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jan-2007 Rev. C  
Page 1 of 3  

与MMDT2907A相关器件

型号 品牌 获取价格 描述 数据表
MMDT2907A_1 DIODES

获取价格

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907A_15 WINNERJOIN

获取价格

PNP TRANSISTOR
MMDT2907A_2 DIODES

获取价格

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907A-13 DIODES

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA S
MMDT2907A-7 DIODES

获取价格

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907A-7-F DIODES

获取价格

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2907AHE3 MCC

获取价格

Tape&Reel:3Kpcs/Reel;
MMDT2907AQ DIODES

获取价格

Dual PNP, 60V, 0.6A, SOT363
MMDT2907AQ PANJIT

获取价格

SOT-363
MMDT2907AQ YANGJIE

获取价格

SOT-363