Datasheet > MMDT2907A_15

MMDT2907A_15

更新时间： 2024-09-17 01:24:03

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
2页	134K
描述
PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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MMDT2907A_15 数据手册

RoHS

MMDT2907A

MMDT2907A TRANSISTOR (PNP)

FEATURES

Power dissipation

P_CM:

0.15

W (Tamb=25℃)

Collector current

I_CM:

-0.6

-60

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= -10µA, I_E=0

Ic= -10mA, I_B=0

MIN

-60

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

V_CB=-50V, I_E=0

-0. 01

µA

I_EBO

V_EB= -3V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=-10V, I_C= -0.1mA

V_CE=-10V, I_C= -1mA

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C= -150mA

V_CE=-10V, I_C=-500mA

I_C=-150 mA, I_B=-15mA

I_C=-500 mA, I_B=- 50mA

I_C=-150 mA, I_B=-15mA

I_C=-500 mA, I_B= -50mA

V_CE=-20V, I_C= -50mA

f=100MHz

100

h_FE(2)

DC current gain

h_FE(3)

h_FE(4)

300

h_FE(5)

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

-0.4

-1.6

-1.3

-2.6

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

200

MHz

f_T

V_CB=-10V, I_E= 0

Output Capacitance

C_ob

f=1MHz

V_EB=-2V, I_C= 0

Input Capacitance

C_ib

t_d

f=1MHz

Delay time

V_CC=-30V, I_C=-150mA,

WEJ ELECTRONIC CO.,LTD

Rise time

t_r

I_B1=-15mA

225

Storage time

Fall time

t_S

t_f

V_CC=-6V, I_C=-150mA

I_B1= I_B2= -15mA

Marking

K2F

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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