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MMDT3904 PDF预览

MMDT3904

更新时间: 2024-11-02 12:20:19
品牌 Logo 应用领域
SECOS 晶体晶体管光电二极管
页数 文件大小 规格书
2页 299K
描述
Multi-Chip Transistor

MMDT3904 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliant风险等级:5.1
最大集电极电流 (IC):0.2 A最小直流电流增益 (hFE):100
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIED标称过渡频率 (fT):300 MHz
Base Number Matches:1

MMDT3904 数据手册

 浏览型号MMDT3904的Datasheet PDF文件第2页 
MMDT3904  
NPN Silicon  
Elektronische Bauelemente  
Multi-Chip Transistor  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SOT-363  
* Features  
8o  
.055(1.40)  
.047(1.20)  
o
0
.026TYP  
(0.65TYP)  
.021REF  
(0.525)REF  
Power dissipation  
O
PCM : 0.2 W (Tamp.= 25 C)  
Collector current  
.053(1.35  
.045(1.15  
.096(2.45)  
.085(2.15)  
ICM : 0.2 A  
.018(0.46)  
.010(0.26)  
.014(0.35)  
.006(0.15)  
.006(0.15)  
.003(0.08)  
Collector-base voltage  
C2  
B1  
E 1  
.087(2.20)  
.079(2.00)  
V(BR)CBO : 60 V  
.004(0.10)  
.000(0.00)  
Operating & Storage junction Temperature  
.043(1.10)  
.035(0.90)  
.039(1.00)  
.035(0.90)  
O
O
Tj, Tstg : -55 C~ +150 C  
E 2  
B2  
C1  
Marking: K6N or MA  
Dimensions in inches and (millimeters)  
O
ElECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 10 μAIE=0  
Ic= 1 mAIB=0  
IE= 10μAIC=0  
VCB= 30 V , IE=0  
VCE= 30 V , IB=0  
MIN  
60  
40  
5
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
0.05  
0.05  
0.05  
300  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
VEB= 5V ,  
IC=0  
CE= 1V, IC= 10mA  
CE= 1V, IC= 50mA  
hFE  
V
V
100  
60  
1
2
DC current gain  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
IC=50 mA, IB= 5mA  
IC= 50 mA, IB= 5mA  
0.3  
V
V
0.95  
VCE= 20V, IC= 10mA  
f=100MHz  
Transition frequency  
Output Capacitance  
300  
MHz  
pF  
fT  
VCB=5V, IE= 0  
f=1MHz  
4
Cob  
Delay time  
Rise time  
Storage time  
Fall time  
35  
35  
nS  
nS  
nS  
nS  
td  
tr  
VCC=3V, VBE=0.5V  
IC=10mA , IB1=1mA  
200  
50  
tS  
tf  
VCC=3V, IC=10mA  
IB1= IB2= 1mA  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
06-May-2010 Rev. C  
Page 1 of 2  

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Tape: 3K/Reel , 120K/Ctn;