JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
ꢀꢁꢁꢂꢃꢄꢅꢆꢇꢈ DUAL TRANSISTOR˄NPN+NPN)
ꢂꢌꢍꢎ!"ꢋ
ꢂ ꢂ ꢂ ꢂ
ꢉꢊꢋꢃꢌꢍꢊꢀ
ꢀ
ꢀ
Epitaxial planar die construction
Ideal for low power amplification and switching
ꢁꢋꢍꢎꢏꢐꢑꢀꢀꢀ
KAP
ꢀ ꢀ
ꢁꢋꢒꢏꢁꢌꢁꢀꢍꢋꢃꢏꢐꢑꢓꢀꢔꢃꢕꢖꢗꢘꢀꢀꢙ !"ꢚꢚꢀ#$%"&'(ꢚ"ꢀ #$")*ꢀ ꢀ
ꢓ+,-#!ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢛꢕ&ꢕ,"$"&ꢀ
ꢈꢕ!ꢙ"ꢀ
60
ꢌ ($ꢀ
V
ꢈ./ꢜ
ꢀ
Collector-Base Voltage
ꢈ.ꢊꢜ
ꢈꢊ/ꢜ
ꢏ.ꢀ
ꢀ
ꢀ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
40
5
0.2
0.2
V
V
A
W
ꢛ.ꢀ
Operation Junction and
Storage Temperature Range
TJ,ꢃꢚ$1
ꢀ
-55~+150
ꢀ
ꢊ2ꢊ.ꢃꢍꢏ.ꢋ2ꢀ.3ꢋꢍꢋ.ꢃꢊꢍꢏꢓꢃꢏ.ꢓꢀꢔꢃꢕꢖꢗꢘꢀꢀꢙ !"ꢚꢚꢀ#$%"&'(ꢚ"ꢀꢚ4"5(6(")*ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢛꢕ&ꢕ,"$"&ꢀ
ꢓ+,-#!
ꢃ"ꢚ$ 5# )($(# ꢚ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢁ( ꢀꢀꢀꢀꢀꢀꢀꢀꢃ+4ꢀꢀꢀꢀꢀꢀꢀꢀꢁꢕ7ꢀꢀꢀꢀꢀꢀꢌ ($
.#!!"5$#&8-ꢕꢚ"ꢀ-&"ꢕ9)#' ꢀ:#!$ꢕ1"ꢀ ꢀ
V(BR)CBO IC=10ꢀA,IE=0
60
40
5
V
V
.#!!"5$#&8",($$"&ꢀ-&"ꢕ9)#' ꢀ:#!$ꢕ1"ꢀ ꢀ V(BR)CEO IC=1mA,IB=0
ꢊ,($$"&8-ꢕꢚ"ꢀ-&"ꢕ9)#' ꢀ:#!$ꢕ1"ꢀ
.#!!"5$#&ꢀ5ꢙ$8#66ꢀ5ꢙ&&" $ꢀ ꢀ
ꢊ,($$"&ꢀ5ꢙ$8#66ꢀ5ꢙ&&" $ꢀ ꢀ
V(BR)EBO IE=10ꢀA,IC=0
V
ICBO
IEBO
VCB=30V,IE=0
0.05
0.05
ꢀA
ꢀA
ꢀA
VEB=5V,IC=0
.#!!"5$#&ꢀ5ꢙ$8#66ꢀ5ꢙ&&" $ꢀ ꢀ
ICꢃꢄ
VCꢃ=30V,ꢅꢆꢃꢇꢈꢉꢉꢊ=ꢋꢅꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VCE=1V,IC=0.1mA
ꢀꢀ0.05
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
40
70
VCE=1V,IC=1mA
ꢂ.ꢀ5ꢙ&&" $ꢀ1ꢕ( ꢀ ꢀ
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
100
60
300
30
VCE(sat)1 IC=10mA,IB=1mA
VCE(sat)2 IC=50mA,IB=5mA
VBE(sat)1 IC=10mA,IB=1mA
VBE(sat)2 IC=50mA,IB=5mA
0.2
0.3
V
V
.#!!"5$#&8",($$"&ꢀꢚꢕ$ꢙ&ꢕ$(# ꢀ:#!$ꢕ1"ꢀ
/ꢕꢚ"8",($$"&ꢀꢚꢕ$ꢙ&ꢕ$(# ꢀ:#!$ꢕ1"ꢀ
0.65
300
0.85
0.95
V
V
ꢃ&ꢕ ꢚ($(# ꢀ6&";ꢙ" 5+ꢀ
V
CE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
CC=3V, VBE(off)=-0.5V
IC=10mA , IB1=-IB2= 1mA
CC=3V, IC=10mA
MHz
pF
fT
.#!!"5$#&ꢀ#ꢙ$4ꢙ$ꢀ5ꢕ4ꢕ5($ꢕ 5"ꢀ
Cob
4
ꢂ"!ꢕ+ꢀ$(,"ꢀ
ꢍ(ꢚ"ꢀ$(,"ꢀ
35
35
ns
ns
td
tr
V
ꢓ$#&ꢕ1"ꢀ$(,"ꢀ
ꢉꢕ!!ꢀ$(,"ꢀ
200ꢀꢀꢀꢀꢀꢀꢀꢀnꢀꢀsꢀꢀꢀ
tꢁ
tf
V
IB1=-IB2=1mA
50
ns
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1
Rev. - 2.0