Datasheet > MMDT3906_11

MMDT3906_11

更新时间： 2024-11-02 10:51:59

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	245K
描述
PNP Small Signal Surface Mount Transistors

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中文翻译

获取价格

数据手册

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MMDT3906_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMDT3906

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP

RoHS Compliant. See ordering information)

Ideal for Low Power Amplification and Switching

Ultra-small Surface Mount Package

•

Small Signal Surface

Mount Transistors

Epitaxial Planar Die Construction

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking:K3N

Maximum Ratings @ 25 C Unless Otherwise Specified

SOT-363

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Dissipation

Rating(PNP)

Unit

Symbol

V_CEO

V_CBO

V_EBO

I_C

-40

-5

-0.2

0.2

P_C

T_J

Operating Junction Temperature

-55 to +150

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc, I_B=0)

Min

Max

Units

V_(BR)CEO

-40

---

Vdc

Collector-Base Breakdown Voltage

(I_C=-10uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=-10uAdc, I_C=0)

Collector Cutoff Current

(V_CB=-30Vdc,I_E=0)

V_(BR)CBO

V_(BR)EBO

I_CBO

-40

-5

---

Vdc

---

-50

nAdc

Emitter Cutoff Current

(V_EB=-5Vdc,I_C=0)

I_EBO

DC Current Gain

DIMENSIONS

(I_C=-0.1mAdc, V_CE=-1Vdc)

(I_C=-1mAdc, V_CE=-1Vdc)

(I_C=-10mAdc, V_CE=-1Vdc)

(I_C=-50mAdc, V_CE=-1Vdc)

(I_C=-100mAdc, V_CE=-1Vdc)

Collector-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1mAdc)

(I_C=-50mAdc, I_B=-5mAdc)

Base-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1mAdc)

(I_C=-50mAdc, I_B=-5mAdc)

Current Gain-Bandwidth Product

(V_CE=-20Vdc, I_C=-10mAdc, f=100MHz)

Output Capacitance

100

---

300

---

INCHES

MIN

h_FE

DIM

MAX

.014

.053

.096

MIN

0.15

1.15

2.15

MAX

0.35

1.35

2.45

NOTE

---

.006

.045

.085

---

.026

0.65Nominal

.047

.071

---

.055

.087

.004

.043

.018

.006

1.20

1.80

1.40

2.20

0.10

1.10

0.46

0.15

V_CE(sat)

---

-0.25

-0.4

Vdc

---

.035

.010

.003

0.90

0.26

0.08

V_BE(sat)

-0.65

---

-0.85

-0.95

f_T

250

---

4.5

MHz

C_ob

(V_CB=-5Vdc, f=1.0MHz, I_E=0)

Noise Figure

---

(V_CE=-5V,I_C=-0.1mA, f=1KHz, R_S=1k=)

t_d

t_r

t_S

t_f

Delay Time

Rise Time

Storage Time

Fall Time

_CC=-3V,I_C=-10mA,

---

225

V_BE=-0.5V, I_B1=-I_B2=-1mA

V_CC=-3V, I_C=-10mA,

I_B1=-I_B2=-1mA

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Revision: A

2011/01/01

中文翻译

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与MMDT3906_11相关器件

型号	品牌	获取价格	描述	数据表
MMDT3906_15	UTC	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906_2	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906-7	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906-7-F	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906G-AL6-R	UTC	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMDT3906L-AL6-R	UTC	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906Q	DIODES	获取价格	Dual PNP, 40V, 0.2A, SOT363
MMDT3906Q	YANGJIE	获取价格	SOT-363
MMDT3906T/R13	PANJIT	获取价格	DUAL SURFACE MOUNT PNP TRANSISTORS

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