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MMDT3906TB6 PDF预览

MMDT3906TB6

更新时间: 2024-11-02 10:51:59
品牌 Logo 应用领域
强茂 - PANJIT 晶体开关晶体管光电二极管通用开关
页数 文件大小 规格书
4页 129K
描述
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT3906TB6 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):300 ns
最大开启时间(吨):70 nsBase Number Matches:1

MMDT3906TB6 数据手册

 浏览型号MMDT3906TB6的Datasheet PDF文件第2页浏览型号MMDT3906TB6的Datasheet PDF文件第3页浏览型号MMDT3906TB6的Datasheet PDF文件第4页 
MMDT3906TB6  
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR  
SOT-563  
200 mWatts  
POWER  
40 Volts  
VOLTAGE  
FEATURES  
• PNP epitaxial silicon, planar design  
• Collector-emitter voltage VCE = -40V  
• Collector current IC = -200mA  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: SOT-563, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.003gram  
• Marking: TS  
6
5
4
1
2
3
Fig.53  
ABSOLUTE RATINGS  
PARAMETER  
Symbol  
Value  
-40  
Units  
V
Collector - Emitter Voltage  
Collector - Base Voltage  
Emitter - Base Voltage  
V
V
V
CEO  
CBO  
EBO  
-40  
-5.0  
-200  
V
V
Collector Current - Continuous  
I
C
mA  
THERMALCHARACTERISTICS  
Parameter  
Symbol  
PTOT  
Value  
200  
Units  
mW  
Max Power Dissipation (Note 1)  
Thermal Resistance , Junction to Ambient  
Junction Temperature  
RθJA  
TJ  
625  
OC/W  
OC  
-55 to 150  
-55 to 150  
Storage Temperature  
TSTG  
OC  
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.  
REV.0.0-FEB.6.2009  
PAGE . 1  

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