MMDT3906V-T

更新时间： 2024-09-28 13:11:43

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
2页	104K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMDT3906V-T 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMDT3906

Micro Commercial Components

Features

•

Ideal for Low Power Amplification and Switching

Ultra-small Surface Mount Package

Epitaxial Planar Die Construction

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

PNP

•

Small Signal Surface

Mount Transistors

x Marking:K3N

Maximum Ratings @ 25 C Unless Otherwise Specified

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Dissipation

Rating(PNP)

Unit

Symbol

V_CEO

V_CBO

V_EBO

I_C

-40

-5

-0.2

0.2

SOT-363

P_C

T_J

Operating Junction Temperature

-55 to +150

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-10uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=-10uAdc, I_C=0)

Collector Cutoff Current

Min

Max

Units

V_(BR)CEO

-40

---

Vdc

V_(BR)CBO

V_(BR)EBO

I_CBO

-40

-5

---

Vdc

---

-50

nAdc

(V_CB=-30Vdc,I_E=0)

Emitter Cutoff Current

(V_EB=-5Vdc,I_C=0)

I_EBO

DC Current Gain

(I_C=-0.1mAdc, V_CE=-1Vdc)

(I_C=-1mAdc, V_CE=-1Vdc)

(I_C=-10mAdc, V_CE=-1Vdc)

(I_C=-50mAdc, V_CE=-1Vdc)

(I_C=-100mAdc, V_CE=-1Vdc)

Collector-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1mAdc)

(I_C=-50mAdc, I_B=-5mAdc)

Base-Emitter Saturation Voltage

(I_C=-10mAdc, I_B=-1mAdc)

(I_C=-50mAdc, I_B=-5mAdc)

Current Gain-Bandwidth Product

(V_CE=-20Vdc, I_C=-10mAdc, f=100MHz)

Output Capacitance

100

---

300

---

h_FE

---

DIMENSIONS

INCHES

MIN

---

DIM

MAX

MIN

0.15

1.15

2.15

MAX

0.35

1.35

2.45

NOTE

.006

.045

.085

.014

.053

.096

V_CE(sat)

---

-0.25

-0.4

Vdc

.026

0.65Nominal

.047

.071

---

.055

.087

.004

.043

.018

.006

1.20

1.80

1.40

2.20

0.10

1.10

0.46

0.15

V_BE(sat)

-0.65

---

-0.85

-0.95

---

.035

.010

.003

0.90

0.26

0.08

f_T

250

---

4.5

MHz

C_ob

(V_CB=-5Vdc, f=1.0MHz, I_E=0)

Noise Figure

---

(V_CE=-5V,I_C=-0.1mA, f=1KHz, R_S=1k=)

t_d

t_r

t_S

t_f

Delay Time

Rise Time

Storage Time

Fall Time

_CC=-3V,I_C=-10mA,

---

225

V_BE=-0.5V, I_B1=-I_B2=-1mA

V_CC=-3V, I_C=-10mA,

I_B1=-I_B2=-1mA

www.mccsemi.com

Revision: 4

2008/12/31

1 of 2

中文翻译

下载PDF

与MMDT3906V-T相关器件

型号	品牌	获取价格	描述	数据表
MMDT3906V-TP	MCC	获取价格	PNP Plastic-Encapsulate Transistors
MMDT3906V-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN
MMDT3946	LRC	获取价格	Small signal surface mount transistor
MMDT3946	MCC	获取价格	NPN/PNP Small Signal Surface Mount Transistors
MMDT3946	SECOS	获取价格	Multi-Chip Transistor
MMDT3946	PANJIT	获取价格	COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR
MMDT3946	UTC	获取价格	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3946	BL Galaxy Electrical	获取价格	Small Signal Surface Mount Transistor
MMDT3946	TRSYS	获取价格	CMOPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3946	DIODES	获取价格	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

与MMDT3906V-T相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

22
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

17
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

31

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDT3906V-T

MMDT3906V-T 数据手册

与MMDT3906V-T相关器件

与MMDT3906V-T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDT3906V-T

MMDT3906V-T 数据手册

与MMDT3906V-T相关器件

与MMDT3906V-T相关文章

您还可以找

您在本页遇到什么问题？