Datasheet > MMDT3906

MMDT3906

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
鲁光 - LGE		光电二极管双极型晶体管
页数	文件大小	规格书
2页	758K
描述
双极型晶体管

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MMDT3906 数据手册

MMDT3906

SOT-363 Dual Transistor(PNP)

SOT-363

Features

Epitaxial planar die construction

Ideal for low power amplification and switching

MARKING:K3N

Dimensions in inches and (millimeters)

MAXIMUM RATINGS(T_A=25℃ unless otherwise noted)

Parameter

Symbol

V_CBO

Value

-40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-40

-5

Collector Current -Continuous

Collector Power Dissipation

-0.2

0.2

P_C

Thermal Resistance. Junction to Ambient Air

Junction Temperature

R_θJA

T_J

625

℃/W

℃

150

Storage Temperature

T_stg

-55-150

ELECTRICAL CHARACTERISTICS(Tamb=25℃unless otherwise specified)

Symbol

Test conditions

Parameter

MIN

-40

-5

TYP

MAX

UNIT

V_(BR)CBOI_C=-10μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-10μA,I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CEX

I_EBO

V_CE=-30V,V_EB(OFF)=-3V

-50

V_EB=-5V,I_C=0

Base cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

V_CE=-1V,I_C=-0.1mA

V_CE=-1V,I_C=-1mA

V_CE=-1V,I_C=-10mA

V_CE=-1V,I_C=-50mA

V_CE=-1V,I_C=-100mA

DC current gain

100

300

V_CE(sat)1I_C=-10mA,I_B=-1mA

V_CE(sat)2I_C=-50mA,I_B=-5mA

V_BE(sat)1I_C=-10mA,I_B=-1mA

V_BE(sat)2I_C=-50mA,I_B=-5mA

-0.25

-0.4

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.65

250

-0.85

-0.95

f_T

C_ob

t_d

V_CE=-20V,I_C=-10mA,f=100MHz

Transition frequency

Collector output capacitance

Noise figure

MHz

V_CB=-5V,I_E=0,f=1MHz

4.5

V_CE=-5V,I_c=-0.1mA,f=1kHz,R_g=1KΩ

Delay time

225

_CC=-3V, V_BE=0.5V

I_C=-10mA , I_B1=-I_B2=-1mA

t_r

Rise time

t_S

Storage time

V_CC=-3V, I_C=-10mA

I_B1=-I_B2=- 1mA

t_f

Fall time

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Revision:20170701-P1

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