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TM
MMDT3904V
Micro Commercial Components
Features
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epitaxial Die Construction
NPN
•
•
Plastic-Encapsulate
Transistors
Ideal for Low Power Amplification and Switching
•
Ultra-small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
·
·
x
Marking:KAP
Maximum Ratings @ 25OC Unless Otherwise Specified
SOT-563
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Rating
40
60
Unit
V
V
V
A
W
R/W
R
6
0.2
0.2
625
PC
Thermal Resistance Junction to Ambient
R
E
JA
TJ
Operating Junction Temperature
-55 to +150
-55 to +150
TSTG
Storage Temperature
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
V(BR)CEO
Parameter
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
Min
Typ
Max
Units
40
---
---
Vdc
V(BR)CBO
V(BR)EBO
ICEX
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
Base Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
DC Current Gain
(IC=0.1mAdc, VCE=1Vdc)
(IC=1mAdc, VCE=1Vdc)
(IC=10mAdc, VCE=1Vdc)
(IC=50mAdc, VCE=1Vdc)
(IC=100mAdc, VCE=1Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
60
5
---
---
---
---
---
---
50
50
Vdc
Vdc
DIMENSIONS
---
---
nAdc
nAdc
INCHES
MIN
.006
.043
.061
MM
IBL
DIM
A
B
C
D
G
H
K
L
M
MAX
.011
.049
.067
MIN
0.15
1.10
1.55
MAX
0.30
1.25
1.70
NOTE
hFE
40
70
100
60
---
---
---
---
---
---
---
300
---
.020
0.50
.035
.059
.022
.004
.004
.043
.067
.023
.011
.007
0.90
1.50
0.56
0.10
0.10
1.10
1.70
0.60
0.30
0.18
---
30
---
VCE(sat)
---
---
---
---
0.2
0.3
Vdc
Vdc
VBE(sat)
0.65
---
---
---
0.85
0.95
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Revision: A
2011/01/01
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