Datasheet > MMDT3904_11

MMDT3904_11

更新时间： 2022-11-22 14:51:14

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	210K
描述
200mW Plastic-Encapsulate Transistors

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数据手册

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MMDT3904_11 数据手册

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

MMDT3904

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

200mW

RoHS Compliant. See ordering information)

•

Collector

Current:IC=0.2A

Plastic-Encapsulate

Transistors

•

Epitaxial planar die construction

Ideal for low power amplification and switching

Marking: K6N

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-363

Maximum Ratings

Symbol

P_C

Rating

Power dissipation ⁽¹⁾

Rating

200

625

Unit

^OC/W

^OC

R_THJA

T_J

T_STG

Thermal Resistance

Junction Temperature

Storage Temperature

-55 to +150

^OC

Electrical Characteristics @ 25°C Unless Otherwise Specified

Max

Symbol

Parameter

Min

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_EBO

Collector-Emitter Breakdown Voltage

(I_C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10µAdc, I_C=0)

Emitter Cutoff Current

(V_EB=5Vdc, I_C=0)

Vdc

5.0

Vdc

nAdc

DIMENSIONS

I_CEO

Collector Cutoff Current

(V_CE=30Vdc, I_B=0)

INCHES

MIN

DIM

MAX

.014

.053

.096

MIN

0.15

1.15

2.15

MAX

0.35

1.35

2.45

NOTE

I_CBO

Collect Cutoff Current

(V_CB=30Vdc, I_E=0)

.006

.045

.085

ON CHARACTERISTICS

.026

0.65Nominal

.047

.071

---

.055

.087

.004

.043

.018

.006

1.20

1.40

2.20

0.10

1.10

0.46

0.15

h_FE

DC Current Gain*

1.80

---

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=50mAdc, V_CE=1.0Vdc)

100

300

.035

.010

.003

0.90

0.26

0.08

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

(I_C=50mAdc, I_B=5.0mAdc)

Base-Emitter Saturation Voltage

(I_C=50mAdc, I_B=5.0mAdc)

0.3

Vdc

0.95

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=5.0Vdec, I_E=0, f=1.0MHz)

300

MHz

C_obo

4.0

SWITCHING CHARACTERISTICS

t_d

t_r

t_s

t_f

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, V_BE=0.5Vdc

I_C=10mAdc, I_B1=1.0mAdc)

(V_CC=3.0Vdc, I_C=10mAdc

I_B1=I_B2=1.0mAdc)

200

Note: 1. Valid provided that terminals are kept at ambient temperature.

www.mccsemi.com

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Revision: A

2011/01/01

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