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MMDT2907A-7-F PDF预览

MMDT2907A-7-F

更新时间: 2024-11-02 03:48:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 129K
描述
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMDT2907A-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:0.77最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):45 nsBase Number Matches:1

MMDT2907A-7-F 数据手册

 浏览型号MMDT2907A-7-F的Datasheet PDF文件第2页浏览型号MMDT2907A-7-F的Datasheet PDF文件第3页浏览型号MMDT2907A-7-F的Datasheet PDF文件第4页 
SPICE MODEL: MMDT2907A  
MMDT2907A  
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Ideal for Low Power Amplification  
and Switching  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 2)  
SOT-363  
A
Dim  
A
B
C
D
F
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C2  
B1  
E1  
B
C
E2  
B2  
C1  
Mechanical Data  
0.65 Nominal  
H
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
Terminal Connections: See Diagram  
Marking Information: See Page 4  
Ordering and Date Code Information: See Page 4  
0.30  
1.80  
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
H
J
M
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
C2  
B1  
E1  
M
α
All Dimensions in mm  
E2  
B2  
C1  
Weight: 0.006 grams (approximate)  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Collector-Base Voltage  
Symbol  
Value  
Unit  
V
-60  
-60  
V
CBO  
V
CEO  
V
EBO  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current - Continuous (Note 1)  
Total Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
-600  
mA  
mW  
°C/W  
°C  
I
C
200  
P
d
625  
R
θJA  
-55 to +150  
T , T  
j
STG  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30109 Rev. 10 - 2  
1 of 4  
MMDT2907A  
© Diodes Incorporated  
www.diodes.com  

MMDT2907A-7-F 替代型号

型号 品牌 替代类型 描述 数据表
MMDT2907A-7 DIODES

完全替代

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
FFB2907A ONSEMI

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PNP 多芯片通用放大器
CMKT2907A CENTRAL

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ULTRAmini. SURFACE MOUNT DUAL PNP SILICON TRANSISTOR

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