Datasheet > MMDT2907A

MMDT2907A

更新时间： 2024-11-03 14:54:59

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	741K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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MMDT2907A 技术参数

极性：	PNP×2	Collector-emitter breakdown voltage：	60
Collector Current - Continuous：	0.6	DC current gain - Min：	100
DC current gain - Max：	300	Transition frequency：	200
Package：	SOT-363	Storage Temperature Range：	-55-150
class：	Transistors

MMDT2907A 数据手册

MMDT2907A

SOT-363 Transistor(PNP)

SOT-363

Features

Complementary NPN Type available MMDT2222A

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-60

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-5

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-600

200

℃

P_C

T_J

150

T_stg

Storage Temperature

-55-150

℃

MARKING: K2F

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-60

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -10μA, I_E=0

I_C= -10mA, I_B=0

I_E=-10μA, I_C=0

V_CB=-50V, I_E=0

-10

-50

-10

Collector cut-off current

I_CEX

V_CE=-30V,V_EB(Off)=-0.5V

V_EB=-5V, I_C=0

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=-10V, I_C= -0.1mA

V_CE=-10V, I_C= -1mA

100

h_FE(2)

DC current gain

h_FE(3)

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C= -150mA

V_CE=-10V, I_C=-500mA

I_C=-150mA, I_B=-15mA

I_C=-500mA, I_B=- 50mA

I_C=-150mA, I_B=-15mA

I_C=-500mA, I_B= -50mA

V_CE=-20V, I_C= -50mA,f=100MHz

V_CB=-10V, I_E= 0,f=1MHz

V_EB=-2V, I_C= 0,f=1MHz

h_FE(4)

300

h_FE(5)

V_{CE sat)1}

(

-0.4

-1.6

-1.3

-2.6

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

Transition frequency

Output Capacitance

Input Capacitance

Delay time

200

MHz

f_T

C_ob

C_ib

t_d

225

V_CC=-30V,I_C=-150mA, I_B1=-15mA

Rise time

t_r

Storage time

t_S

V_CC=-6V, I_C=-150mA,

I_B1= I_B2= -15mA

Fall time

t_f

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Revision:20170701-P1

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