5秒后页面跳转
MMDT2227G-AL6-R PDF预览

MMDT2227G-AL6-R

更新时间: 2024-11-02 07:15:19
品牌 Logo 应用领域
友顺 - UTC 放大器
页数 文件大小 规格书
3页 122K
描述
NPN & PNP GENERAL PURPOSE AMPLIFIER

MMDT2227G-AL6-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.31
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:30 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

MMDT2227G-AL6-R 数据手册

 浏览型号MMDT2227G-AL6-R的Datasheet PDF文件第2页浏览型号MMDT2227G-AL6-R的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
MMDT2227  
Preliminary  
DUAL TRANSISTOR  
NPN & PNP GENERAL  
PURPOSE AMPLIFIER  
„
DESCRIPTION  
The UTC MMDT2227 is an NPN & PNP general purpose amplifier.  
it’s suitable for a medium power amplifier and switch requiring  
collector currents up to 500mA.  
„
FEATURES  
* Low VCE(SAT), VCE(SAT)=0.4V (typ.)@IC /IB=150mA/15mA,  
CE(SAT)=1.4V (typ.) @IC/IB = 300mA/30mA  
* High collector current gain under high collector current condition  
V
„
EQUIVALENT CIRCUIT  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-363  
Packing  
Lead Free  
Halogen Free  
MMDT2227G-AL6-R  
1
2
3
4
5
6
MMDT2227L-AL6-R  
E1 B1 C2 E2 B2 C1 Tape Reel  
„
MARKING  
www.unisonic.com.tw  
Copyright © 2011 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R218-019.a  

与MMDT2227G-AL6-R相关器件

型号 品牌 获取价格 描述 数据表
MMDT2227HE3 MCC

获取价格

Tape&Reel:3Kpcs/Reel;
MMDT2227L-AL6-R UTC

获取价格

NPN & PNP GENERAL PURPOSE AMPLIFIER
MMDT2227M DIODES

获取价格

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2227M_08 DIODES

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
MMDT2227M-7 DIODES

获取价格

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2227Q DIODES

获取价格

Complementary, 40V, 0.6A, SOT26
MMDT2227-TP MCC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
MMDT2411 ETC

获取价格

Mini size of Discrete semiconductor elements
MMDT2412 ETC

获取价格

Mini size of Discrete semiconductor elements
MMDT2907 ETC

获取价格

Mini size of Discrete semiconductor elements