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MMDT2227 PDF预览

MMDT2227

更新时间: 2024-11-03 17:00:59
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 501K
描述
40V,0.6A,General Purpose NPN+PNP Bipolar Transistor

MMDT2227 数据手册

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NPN/PNP General Purpose Transistor  
MMDT2227  
Features  
Epitaxial planar die construction  
Two internal isolated NPN/PNP transistors in one package  
Ultra-small surface mount package  
Mechanical Data  
Case: SOT-363  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-363  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
MMDT2227  
SOT-363  
3000 pcs / Tape & Reel  
K27  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
NPN  
75  
PNP  
-60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
-60  
V
6
-5  
V
Collector Current (Continuous)  
Collector Current (Pulse)  
0.6  
1.2  
-0.6  
-1.2  
A
ICM  
A
Thermal Characteristics  
Parameter  
Symbol  
PD  
Value  
0.2  
Unit  
W
Power Dissipation *1  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Air *2  
Thermal Resistance Junction-to-Case *2  
Thermal Resistance Junction-to-Lead *2  
Operating Junction Temperature  
Storage Temperature Range  
RθJA  
RθJA  
RθJC  
RθJL  
TJ  
625  
°C/W  
°C/W  
°C/W  
°C/W  
°C  
350  
250  
300  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
STM0028A: March 2023 [2.0]  
www.gmesemi.com  
1

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