Datasheet > MMBTSB1690

MMBTSB1690

更新时间： 2024-02-10 15:49:50

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	155K
描述
PNP Silicon Epitaxial Planar Transistors

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中文翻译

获取价格

数据手册

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MMBTSB1690 数据手册

MMBTSB1690

PNP Silicon Epitaxial Planar Transistors

for low frequency amplifier and driver applications

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-I_CP

P_tot

4 ¹⁾

Power Dissipation

200

Junction Temperature

T_J

T_s

150

Storage Temperature Range

¹⁾Single pulse, Pw = 1 ms.

-55 to +150

Characteristics at T_amb= 25 C

Parameter

Symbol

Min.

270

Typ.

Max.

680

Unit

DC Current Gain

h_FE

at -V_CE= 2 V, -I_C= 200 mA

Collector Base Breakdown Voltage

at -I_C= 10 µA

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

Emitter Base Breakdown Voltage

at -I_E= 10 µA

Collector Emitter Saturation Voltage

at -I_C= 1 A, -I_B= 50 mA

-V_CEsat

-I_CBO

-I_EBO

f_T

0.18

100

Collector Cutoff Current

at -V_CB= 15 V

MHz

Emitter Cutoff Current

at -V_EB= 6 V

Transition Frequency

360

at -V_CE= 2 V, I_E= 200 mA, f = 100 MHz

Collector Output Capacitance

at -V_CB= 10 V, I_E= 0 mA, f = 1 MHz

C_ob

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 13/01/2006

中文翻译

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