Datasheet > MMBTSC1009

MMBTSC1009

更新时间： 2024-09-30 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
1页	133K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

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数据手册

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MMBTSC1009 数据手册

MMBTSC1009

NPN Silicon Epitaxial Transistor

FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

125

T_S

-55 to +125

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 6 V, I_C= 1 mA

h_FE

120

180

Current Gain Group

Collector Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

Base Emitter Voltage

at V_CE= 6 V, I_C= 1 mA

Emitter Cutoff Current

at V_EB= 5 V

Collector Cutoff Current

at V_CB= 50 V

Gain Bandwidth Product

at V_CE= 6 V, -I_E= 1 mA

Output Capacitance

at V_CB= 6 V, f = 1 MHz

Collector Base Time Constant

at V_CB= 6 V, f = 31.9 MHz, -I_E= 10 mA

Noise Figure

V_CE(sat)

V_BE

0.3

0.75

0.1

0.65

I_EBO

I_CBO

f_T

µA

MHz

150

250

1.9

C_ob

2.2

C_c.rb’b

at V_CE= 6 V, -I_E= 1 mA. f = 1 MHz, R_G= 500 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 21/12/2005

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