Datasheet > MMBTSC2223

MMBTSC2223

更新时间： 2022-12-20 16:30:27

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
3页	329K
描述
NPN Silicon Epitaxial Planar Transistor

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MMBTSC2223 数据手册

MMBTSC2223

NPN Silicon Epitaxial Planar Transistor

High frequency amplifier

The transistor is subdivided into three groups, R,

O and Y, according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Power Dissipation

P_tot

200

150

-55 +150

Junction Temperature

Storage Temperature Range

T_j

T_S

Characteristics at T_amb=25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 6 V, I_C= 1 mA

Current Gain Group

h_FE

120

180

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

V_CE(sat)

I_CBO

0.3

0.1

µA

Collector Cutoff Current

at V_CB= 30 V

Emitter Cutoff Current

at V_EB= 4 V

I_EBO

Collector Base Breakdown Voltage

at I_C= 10 µA

V_(BR)CBO

Collector Emitter Breakdown Voltage

at I_C= 1 mA

V_(BR)CEO

V_(BR)EBO

f_T

Emitter Base Breakdown Voltage

at I_E= 10 µA

Gain Bandwidth Product

at V_CE= 6 V, -I_E=1 mA

400

600

MHz

Output Capacitance

C_OB

at V_CB= 6 V, I_E= 0, f = 1 MHz

Collector to Base Time Constant

C_C-rb'b

at V_CE= 6 V, -I_E= 1 mA, f = 31.9 MHz

Noise Figure

at V_CE= 6 V, -I_E= 1 mA, f = 100 MHz, R_G= 50 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 14/12/2005

12 3

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