Datasheet > MMBTSC2712

MMBTSC2712

更新时间： 2022-11-22 11:52:34

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
3页	244K
描述
NPN Silicon Epitaxial Planar Transistor

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MMBTSC2712 数据手册

MMBTSC2712

NPN Silicon Epitaxial Planar Transistor

for audio frequency general purpose amplifier applications.

The transistor is subdivided into four groups O, Y, G and L,

according to its DC current gain.

Features

․High voltage and high current: V_CEO=50V, I_C=150mA(max)

․High h_FE: h_FE=70~700

SOT-23 Plastic Package

․Low noise: NF=1dB(typ.), 10dB(max)

․Small package

Absolute Maximum Ratings (T_a= 25 C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

150

Base Current

I_B

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

125

T_S

-55 to +125

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 20/10/2005

12 3

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