Datasheet > MMBTSC3245W

MMBTSC3245W

更新时间： 2023-12-06 20:11:36

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	291K
描述
小信号晶体管

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数据手册

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MMBTSC3245W 数据手册

MMBTSC3245W

NPN Silicon Epitaxial Planar Transistor

Features

• Large current capacity

Collector

• Low collector-to-emitter saturation voltage

• High-speed switching

Base

• Ultrasmall package permitting applied

• High allowable power dissipation

Emitter

Applicaitons

• Relay drivers, lamp drivers, motor drivers

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector Current

Peak Collector Current

I_CM

300 ¹⁾

Power Dissipation

P_tot

500 ²⁾

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

417 ¹⁾

Thermal Resistance from Junction Ambient

℃/W

250 ²⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

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Dated: 10/05/2022 Rev: 01

12 3 4 5

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