Datasheet > MMBTSC2413

MMBTSC2413

更新时间： 2024-02-16 00:38:36

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	220K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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MMBTSC2413 数据手册

MMBTSC2413

NPN Silicon Epitaxial Planar Transistor

High frequency amplifier transistor.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Current

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

h_FE

Min.

Typ.

Max.

180

Unit

DC Current Gain

µA

at V_CE= 6 V, I_C= 1 mA

Collector Base Cutoff Current

at V_CB= 24 V

Emitter Base Cutoff Current

at V_EB= 3 V

Collector Base Breakdown Voltage

at I_C= 50 µA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

I_CBO

0.5

I_EBO

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

f_T

Emitter Base Breakdown Voltage

at I_E= 50 µA

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

Gain Bandwidth Product

at V_CE= 6 V, -I_E= 1 mA, f = 100 MHz

Output Capacitance

0.3

100

300

1.3

MHz

C_ob

2.2

at V_CB= 6 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 17/04/2009

中文翻译

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