Datasheet > MMBTSC2712

MMBTSC2712

更新时间： 2022-10-12 15:15:07

品牌	Logo	应用领域
平晶微 - PJSEMI		/
页数	文件大小	规格书
3页	787K
描述
NPN Transistor

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MMBTSC2712 数据手册

MMBTSC2712

NPN Transistor

Features

SOT-23

(TO-236)



For General Purpose Amplifier Applications.

The Transistor is Subdivided into Four Groups O,

Y, G and L. According to its DC Current Gain

Marking：

MMBTSC2712O: LO

MMBTSC2712Y: LY

MMBTSC2712G: LG

MMBTSC2712L: LL

1.Base 2.Emitter 3.Collector

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

V_CBO

V_CEO

Collector Base Voltage

Collector Emitter Voltage

V_EBO

I_C

Emitter Base Voltage

Collector Current

Base Current

150

I_B

P_D

200

Power Dissipation

T_J

Junction Temperature

150

℃

T_STG

Storage Temperature Range

-55 to 150

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 6 V, IC = 1 mA Current Gain Group

140

240

400

700

H_FE

120

200

350

Collector Base Cutoff Current

at VCB = 60 V

I_CBO

I_EBO

V_CE(sat)

f_T

100

0.25

Emitter Base Cutoff Current

at VEB = 5 V

Collector Emitter Saturation Voltage

at IC = 100 mA, IB = 10 mA

Transition Frequency

at VCE = 10 V, IC = 1 mA

MHz

Collector Base Capacitance

at VCB = 10 V, f = 1 MHz

C_ob

3.5

1 / 3

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