Datasheet > MMBTSC1815

MMBTSC1815

更新时间： 2024-10-02 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	192K
描述
NPN Silicon Epitaxial Planar Transistor

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MMBTSC1815 数据手册

MMBTSC1815

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into four groups O, Y,

G and L, according to its DC current gain. As

complementary type the PNP transistor

MMBTSA1015 is recommended.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

150

Base Current

I_B

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

-55 to +150

Characteristics at T_amb=25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE=6V, I_C=2mA

h_FE

120

200

350

140

240

400

700

Current Gain Group

at V_CE=6V, I_C=150mA

Collector Saturation Voltage

at I_C=100mA, I_B=10mA

V_CE(sat)

V_BE(sat)

0.25

Base Saturation Voltage

at I_C=100mA, I_B=10mA

Collector Cutoff Current

at V_CB=60V

at V_EB=5V

I_CBO

I_EBO

0.1

µA

Gain Bandwidth Product

at V_CE=10V, I_C=1mA

f_T

MHz

Output Capacitance

at V_CB=10V, f=1MHz

C_OB

Noise Figure

at V_CE=6V, I_C=0.1mA, f=1KHz, R_G=10KΩat

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 02/12/2005

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