Datasheet > MMBTSC1623

MMBTSC1623

更新时间： 2024-01-07 19:41:45

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	211K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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MMBTSC1623 数据手册

MMBTSC1623

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications

The transistor is subdivided into four groups,

O, Y, G and L, according to its DC current gain

SOT-23 Plastic Package

Value

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

100

Power Dissipation

P_tot

T_j

200

Junction Temperature

Storage Temperature Range

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 6 V, I_C= 1 mA

Current Gain Group

h_FE

180

270

400

600

135

200

300

Collector Base Breakdown Voltage

at I_C= 100 µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 10 µA

Collector Cutoff Current

at V_CB= 60 V

0.1

0.3

µA

Emitter Cutoff Current

at V_EB= 5 V

I_EBO

Collector Saturation Voltage

at I_C= 100 mA, I_B= 10 mA

V_CE(sat)

V_BE(sat)

f_T

Base Saturation Voltage

at I_C= 100 mA, I_B= 10 mA

Gain Bandwidth Product

at V_CE= 6 V, I_C= 10 mA

250

MHz

Output Capacitance

at V_CB= 6 V, f = 1 MHz

C_OB

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 04/09/2006

中文翻译

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