Datasheet > MMBTSB624

MMBTSB624

更新时间： 2024-02-25 17:54:14

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	166K
描述
PNP Silicon Epitaxial Planar Transistor

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MMBTSB624 数据手册

MMBTSB624

PNP Silicon Epitaxial Planar Transistor

For use in small type equipments, especially

recommended or hybrid circuit and other applications

The transistor is subdivided into five groups A, B, C, D

and E, according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

700

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 1 V, -I_C= 100 mA

h_FE

110

135

170

200

250

180

220

270

320

400

at -V_CE= 1 V, -I_C= 700 mA

Collector Base Cutoff Current

at -V_CB= 30 V

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Base Breakdown Voltage

at -I_C= 100 µA

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

-I_CBO

-I_EBO

100

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(on)

C_ob

Emitter Base Breakdown Voltage

at -I_E= 100 µA

Collector Emitter Saturation Voltage

at -I_C= 700 mA, -I_B= 70 mA

Base Emitter On Voltage

at -V_CE= 6 V , -I_C= 10 mA

Output Capacitance

at -V_CB= 6 V, I_E= 0, f = 1 MHz

Transition Frequency

0.6

0.7

0.6

160

MHz

f_T

at -V_CE= 6 V, -I_C= 10 mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 12/11/2007

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