Datasheet > MMBTA55LT1G_10

MMBTA55LT1G_10

更新时间： 2024-02-18 13:40:40

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管驱动
页数	文件大小	规格书
5页	99K
描述
Driver Transistors PNP Silicon

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MMBTA55LT1G_10 数据手册

MMBTA55LT1G,

MMBTA56LT1G

Driver Transistors

PNP Silicon

http://onsemi.com

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

COLLECTOR

Compliant

BASE

MAXIMUM RATINGS

EMITTER

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

CEO

CBO

EBO

Vdc

MMBTA55

MMBTA56

−60

−80

Collector−Base Voltage

Vdc

MMBTA55

MMBTA56

−60

−80

Emitter−Base Voltage

−4.0

Vdc

SOT−23

CASE 318

STYLE 6

Collector Current − Continuous

−500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

MARKING DIAGRAM

Total Device Dissipation FR−5 Board

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

2xx M G

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Substrate, (Note 2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

2xx = Device Code

x = H for MMBTA55LT1

xx = GM for MMBTA56LT1

= Date Code*

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−55 to +150

stg

= Pb−Free Package

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Publication Order Number:

October, 2010 − Rev. 6

MMBTA55LT1/D

12 3 4 5

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