Datasheet > MMBTA56

MMBTA56

更新时间： 2024-11-20 10:52:23

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	806K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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MMBTA56 数据手册

MMBTA56

TRANSISTOR(PNP)

SOT–23

FEATURES

 General Purpose Amplifier Applications

MARKING: 2GM

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

V_CBO

Collector-Base Voltage

-80

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-4

Collector Current

-500

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

225

P_C

R_ΘJA

T_j

555

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=-100µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100µA, I_C=0

-80

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-80

-4

I_CBO

I_CEO

V_CB=-80V, I_E=0

-0.1

400

µA

V_CE=-60V, I_B=0

Collector cut-off current

I_EBO

V_EB=-4V, I_C=0

Emitter-base breakdown voltage

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-100mA

I_C=-100mA, I_B=-10mA

V_CE=-1V, I_C=-100mA

V_CE=-1V,I_C=-100mA, f=100MHz

100

DC current gain

-0.25

-1.2

Collector-emitter saturation voltage

Base-emitter voltage

f_T

MHz

Transition frequency

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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