Datasheet > MMBTA56/E9

MMBTA56/E9

更新时间： 2024-11-18 14:53:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	38K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MMBTA56/E9 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	100
JESD-609代码：	e3	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

MMBTA56/E9 数据手册

MMBTA56

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistor (PNP)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

Mounting Pad Layout

0.031 (0.8)

Pin Configuration

1 = Base 2 = Emitter

3 = Collector

0.035 (0.9)

0.079 (2.0)

.037(0.95)

0.037 (0.95)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Features

Mechanical Data

• PNP Silicon Epitaxial Planar Transistor for

switching and amplifier applications.

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

• As complementary type, the NPN transistor MMBTA06

is recommended.

Marking Code: 2GM

Packaging Codes/Options:

• This transistor is also available in the TO-92 case with

the type designation MPSA56.

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

–V_CBO

–V_CEO

–V_EBO

–I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

4.0

500

277⁽¹⁾

300⁽²⁾

Power Dissipation at T_A= 25°C

P_tot

Thermal Resistance Junction to Ambient Air

Junction Temperature

R_θJA

T_j

450⁽¹⁾

°C/W

°C

150

Storage Temperature Range

T_S

–55 to +150

°C

Notes: (1) Device on fiberglass substrate, see layout.

(2) Device on alumina substrate.

Document Number 88230

20-Feb-02

www.vishay.com

中文翻译

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