Datasheet > MMBTA56-AU

MMBTA56-AU

更新时间： 2024-11-04 12:46:43

品牌	Logo	应用领域
强茂 - PANJIT		晶体晶体管高压
页数	文件大小	规格书
7页	250K
描述
NPN AND PNP HIGH VOLTAGE TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBTA56-AU 数据手册

MMBTA05-AU,MMBTA06-AU,MMBTA55-AU,MMBTA56-AU

NPN AND PNP HIGH VOLTAGE TRANSISTOR

SOT-23

Unit：inch(mm)

POWER

225 mWatts

60~80 Volts

VOLTAGE

FEATURES

• NPN and PNP silicon, planar design

• Collector current I_C= 500mA

0.120(3.04)

0.110(2.80)

• Acqire quality system certificate : TS16949

AEC-Q101 qualified

•

• Lead free in comply with EU RoHS 2002/95/EC directives.

0.056(1.40)

0.047(1.20)

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.008(0.20)

0.003(0.08)

0.079(2.00)

0.070(1.80)

MECHANICAL DATA

• Case: SOT-23, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.0003 ounces, 0.0084 grams

• Marking :

0.044(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

0.020(0.50)

0.013(0.35)

MMB TA 05-A U=B 05

MMB TA 06-A U=B 06

MMB TA 55-A U=B 55

MMB TA 56-A U=B 56

MAXIMUM RATINGS

SYMBO-

PARAMETER

MMBTA05-AU MMBTA55-AU MMBTA06-AU MMBTA56-AU UNITS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Circuit Figure

V_CEO

V_CBO

V_{EB O}

I_C

4.0

500

NPN

PNP

NPN

PNP

THERMAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MAX

UNIT

Total Device Dissipation FR-5 Board (Note 1)T

=25^OC

225

1.8

Derate above 25 ^O

mW/^OC

Thermal Resistance , Junction to Ambient

Rθ^JA

556

^OC/W

Total Device Dissipation Alumina Substrate (Note 2)T

=25^OC

300

2.4

Derate above 25 ^O

mW/^OC

Thermal Resistance , Junction to Ambient

Junction and Storage Temperature

Rθ^JA

417

^OC

,TSTG

-55 to 150

NPN

PNP

1.FR-4=70 x 60 x 1mm.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina

STAD-NOV.30.2005

PAGE . 1

12 3 4 5 6 7

中文翻译

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