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MMBTA56-7 PDF预览

MMBTA56-7

更新时间: 2024-11-17 22:39:43
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 49K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBTA56-7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.07Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBTA56-7 数据手册

 浏览型号MMBTA56-7的Datasheet PDF文件第2页 
MMBTA55 / MMBTA56  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary NPN Types Available  
(MMBTA05 / MMBTA06)  
Ideal for Medium Power Amplification and  
Switching  
SOT-23  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
C
·
B
B
C
C
Mechanical Data  
·
·
D
TOP VIEW  
B
E
D
G
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
MMBTA55 Marking (See Page 2): K2H  
MMBTA56 Marking (See Page 2): K2G  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approx.)  
E
E
G
H
H
K
·
·
M
J
J
L
K
C
·
·
·
·
·
L
M
a
E
B
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
MMBTA55  
-60  
MMBTA56  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
-80  
-80  
Collector-Emitter Voltage  
-60  
V
Emitter-Base Voltage  
-4.0  
-500  
300  
417  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
mA  
mW  
°C/W  
°C  
Pd  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
MMBTA55  
MMBTA56  
-60  
-80  
V(BR)CBO  
IC = -100mA, IE = 0  
¾
V
Collector-Emitter Breakdown Voltage  
MMBTA55  
MMBTA56  
-60  
-80  
IC = -1.0mA, IB = 0  
V(BR)CEO  
V(BR)EBO  
ICBO  
¾
¾
V
V
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = -100mA, IC = 0  
-4.0  
MMBTA55  
MMBTA56  
VCB = -60V, IE = 0  
VCB = -80V, IE = 0  
¾
-100  
nA  
Collector Cutoff Current  
MMBTA55  
MMBTA56  
VCE = -60V, IBO = 0V  
VCE = -80V, IBO = 0V  
ICEX  
¾
-100  
nA  
ON CHARACTERISTICS (Note 2)  
IC = -10mA, VCE = -1.0V  
hFE  
VCE(SAT)  
VBE(SAT)  
DC Current Gain  
100  
¾
¾
I
C = -100mA, VCE = -1.0V  
IC = -100mA, IB = -10mA  
IC = -100mA, VCE = -1.0V  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
¾
¾
-0.25  
-1.2  
V
V
VCE = -1.0V, IC = -100mA,  
f = 100MHz  
fT  
Current Gain-Bandwidth Product  
50  
¾
MHz  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30054 Rev. 4 - 2  
1 of 2  
MMBTA55 / MMBTA56  
www.diodes.com  

MMBTA56-7 替代型号

型号 品牌 替代类型 描述 数据表
MMBTA56-7-F DIODES

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PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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