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MMBTA56-E6327 PDF预览

MMBTA56-E6327

更新时间: 2024-11-05 10:16:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 75K
描述
Transistor

MMBTA56-E6327 数据手册

 浏览型号MMBTA56-E6327的Datasheet PDF文件第2页浏览型号MMBTA56-E6327的Datasheet PDF文件第3页浏览型号MMBTA56-E6327的Datasheet PDF文件第4页浏览型号MMBTA56-E6327的Datasheet PDF文件第5页浏览型号MMBTA56-E6327的Datasheet PDF文件第6页浏览型号MMBTA56-E6327的Datasheet PDF文件第7页 
SMBTA56/MMBTA56  
PNP Silicon AF Transistor  
Low collector-emitter saturation voltage  
2
3
Complementary type: SMBTA06 / MMBTA06(NPN)  
1
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
Pin Configuration  
Package  
SMBTA56/MMBTA56  
s2G  
SOT23  
1=B  
2=E  
3=C  
Maximum Ratings  
Parameter  
Symbol  
Value  
80  
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CEO  
CBO  
EBO  
80  
4
500  
1
mA  
A
I
C
Peak collector current  
Base current  
I
CM  
100  
200  
330  
mA  
I
B
Peak base current  
Total power dissipation-  
I
BM  
mW  
°C  
P
tot  
T 79°C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
R
215  
thJS  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-19  
1

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