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MMBTA56-7-F PDF预览

MMBTA56-7-F

更新时间： 2024-11-04 03:05:27
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 73K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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MMBTA56-7-F 数据手册

 浏览型号MMBTA56-7-F的Datasheet PDF文件第2页浏览型号MMBTA56-7-F的Datasheet PDF文件第3页 
SPICE MODELS: MMBTA55 MMBTA56  
MMBTA55 / MMBTA56  
Lead-free  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary NPN Types Available (MMBTA05 /  
MMBTA06)  
SOT-23  
A
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
·
·
·
Ideal for Medium Power Amplification and Switching  
Lead Free/RoHS Compliant (Note 3)  
C
B
B
C
Qualified to AEC-Q101 Standards for High Reliability  
C
TOP VIEW  
B
E
D
G
Mechanical Data  
·
D
E
E
Case: SOT-23  
H
G
H
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
M
J
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
L
J
K
C
Terminals: Solderable per MIL-STD-202, Method 208  
L
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
M
a
·
·
·
·
MMBTA55 Marking (See Page 2): K2H  
MMBTA56 Marking (See Page 2): K2G  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approximate)  
E
B
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Symbol  
Maximum Ratings  
Characteristic  
MMBTA55  
-60  
MMBTA56  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
-80  
-80  
Collector-Emitter Voltage  
-60  
V
Emitter-Base Voltage  
-4.0  
-500  
300  
417  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
mA  
mW  
°C/W  
°C  
Pd  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
-55 to +150  
Electrical Characteristics  
@ TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
MMBTA55  
MMBTA56  
-60  
-80  
V(BR)CBO  
IC = -100mA, IE = 0  
¾
V
Collector-Emitter Breakdown Voltage  
MMBTA55  
MMBTA56  
-60  
-80  
IC = -1.0mA, IB = 0  
V(BR)CEO  
V(BR)EBO  
ICBO  
¾
¾
V
V
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
E = -100mA, IC = 0  
-4.0  
MMBTA55  
MMBTA56  
VCB = -60V, IE = 0  
¾
-100  
nA  
V
CB = -80V, IE = 0  
VCE = -60V, IBO = 0V  
CE = -80V, IBO = 0V  
Collector Cutoff Current  
MMBTA55  
MMBTA56  
ICEX  
¾
-100  
nA  
V
ON CHARACTERISTICS (Note 2)  
IC = -10mA, VCE = -1.0V  
C = -100mA, VCE = -1.0V  
hFE  
VCE(SAT)  
VBE(SAT)  
DC Current Gain  
100  
¾
¾
I
IC = -100mA, IB = -10mA  
IC = -100mA, VCE = -1.0V  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
¾
¾
-0.25  
-1.2  
V
V
SMALL SIGNAL CHARACTERISTICS  
VCE = -1.0V, IC = -100mA,  
f = 100MHz  
fT  
Current Gain-Bandwidth Product  
50  
¾
MHz  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30054 Rev. 9 - 2  
1 of 3  
MMBTA55 / MMBTA56  
www.diodes.com  
ã Diodes Incorporated  
123

中文翻译

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