Datasheet > MMBTA56

MMBTA56

更新时间： 2024-09-27 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	421K
描述
80V,0.5A,General Purpose PNP Bipolar Transistor

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MMBTA56 数据手册

4.1500ppm maximum total halogens

5. Pls supply the disassembly chart of homogenous material 請提供產品拆分均質示意圖

The following is the special requirement of the customer以下是客户特别要求

6.接触到部件需要提供CP 65要求的测试报告.For accessible materials,Supplier need provide the Lead &8 Phthalates (DBP, DEHP, DIDP, DINP, DNOP, BBP, DnHP, DIBP) 3rd test report.

7.塑胶和橡胶材料，需要提供SCCP的第3方机构测试报告。For plastic& rubber materials,supplier need provide the SCCP test report.

8.接触到部件需要提供PAHs测试报告。For accessible materials,supplier need provide the PAHs test report

Supplier:(sign and stamp)供應商：(主管級或以上簽名/公司蓋章)

Date日期:

Prepared By制表：

Product Specification

PNP General Purpose Transistor

MMBTA55/A56

FEATURES



Epitaxial planar die construction

Complementary NPN types available

(MMBTA05/MMBTA06)



APPLICATIONS



Ideal for medium NPN amplification and switching

SOT-23

ORDERING INFORMATION

Type No.

Marking

Package Code

MMBTA55

MMBTA56

2GM

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

MMBTA55

MMBTA56

UNIT

collector-base voltage

-60

-80

collector-emitter voltage

emitter-base voltage

collector current (DC)

-60

-4

-0.5

I_B

P_C

Base current

-0.2

0.35

417

142

Collector dissipation

R_θJA

R_θJC

T_J,T_STG

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

junction and storage temperature

°C /W

°C

-55 to +150

STM0102A: August 2021 [P]

www.gmesemi.com

12 3 4

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