Datasheet > MMBTA56

MMBTA56

更新时间： 2024-09-26 10:52:23

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
1页	72K
描述
-0.5A , -80V PNP Plastic Encapsulated Transistor

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MMBTA56 数据手册

MMBTA56

-0.5A , -80V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

ꢀ

General Purpose Amplifier Applications

MARKING

Top View

C B

2GM

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

7’ inch

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.40

0.08

Max.

0.18

0.60

0.20

2.70

2.10

1.20

0.89

1.78

0.30

3.04

2.80

1.60

1.40

2.04

0.50

0.6 REF.

0.85

1.15

Collector

Base

Emitter

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-80

Unit

-80

-4

Collector Current - Continuous

Collector Power Dissipation

-500

225

P_C

Thermal Resistance From Junction

To Ambient

Junction, Storage Temperature

R_θJA

555

°C / W

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

I_C= -100µA, I_E=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-80

-4

I_C= -1mA, I_B=0

I_E= -100µA, I_C=0

-0.1

400

µA

V_CB= -80V, I_E=0

Collector Cut-Off Current

I_CEO

V_CE= -60V, I_B=0

Emitter Cut-Off Current

I_EBO

V_EB= -4V, I_C=0

h_FE1

100

V_CE= -1V, I_C= -10mA

V_CE= -1V, I_C= -100mA

I_C= -100mA, I_B= -10mA

V_CE= -1V, I_C= -100mA

DC Current Gain

h_FE2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition frequency

V_CE(sat)

V_BE

-0.25

-1.2

f_T

MHz V_CE= -1V,I_C= -100mA, f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

11-Jul-2011 Rev. A

Page 1 of 1

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