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MMBTA56 PDF预览

MMBTA56

更新时间: 2024-11-19 14:54:39
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 519K
描述
双极型晶体管

MMBTA56 技术参数

极性:PNPCollector-emitter breakdown voltage:80
Collector Current - Continuous:0.5DC current gain - Min:100
DC current gain - Max:Transition frequency:50
Package:SOT-23Storage Temperature Range:-55-150
class:Transistors

MMBTA56 数据手册

 浏览型号MMBTA56的Datasheet PDF文件第2页 
MMBTA55/A56  
PNP General Purpose Transistor  
1. BASE  
2. EMITTER  
3. COLLECTOR  
A
SOT-23  
Min  
Dim  
A
Max  
3.10  
1.50  
FEATURES  
2.70  
E
z
Epitaxial planar die construction.  
B
1.10  
K
B
C
D
E
1.0 Typical  
0.4 Typical  
z
Complementary NPN types available  
(MMBTA05/MMBTA06).  
0.35  
0.48  
2.00  
0.1  
J
D
G
H
J
1.80  
0.02  
G
0.1 Typical  
H
K
2.20  
2.60  
C
All Dimensions in mm  
APPLICATIONS  
z
Ideal for medium NPN amplification and switching.  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
MMBTA55  
MMBTA56  
2H  
2GM  
SOT-23  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
MMBTA55  
MMBTA56  
-80  
UNIT  
V
VCBO  
collector-base voltage  
-60  
VCEO  
VEBO  
IC  
collector-emitter voltage  
-60  
-80  
V
emitter-base voltage  
-4  
V
collector current (DC)  
-0.5  
0.3  
417  
A
PC  
Collector dissipation  
W
RθJA  
Tj ,Tstg  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
°C/W  
°C  
-55 to +150  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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