Datasheet > MMBTA56

MMBTA56

更新时间： 2024-11-17 22:39:43

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
2页	49K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册
替代型号

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MMBTA56 数据手册

MMBTA55 / MMBTA56

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

Epitaxial Planar Die Construction

Complementary NPN Types Available

(MMBTA05 / MMBTA06)

Ideal for Medium Power Amplification and

Switching

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Mechanical Data

TOP VIEW

Case: SOT-23, Molded Plastic

Case material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

MMBTA55 Marking (See Page 2): K2H

MMBTA56 Marking (See Page 2): K2G

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

MMBTA55

-60

MMBTA56

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

-80

Collector-Emitter Voltage

-60

Emitter-Base Voltage

-4.0

-500

300

417

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

°C/W

°C

P_d

R_qJA

T_j, T_STG

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Symbol

Min

Max

Unit

Test Condition

MMBTA55

MMBTA56

-60

-80

V_(BR)CBO

I_C= -100mA, I_E= 0

Collector-Emitter Breakdown Voltage

MMBTA55

MMBTA56

-60

-80

I_C= -1.0mA, I_B= 0

V_(BR)CEO

V_(BR)EBO

I_CBO

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= -100mA, I_C= 0

-4.0

MMBTA55

MMBTA56

V_CB= -60V, I_E= 0

V_CB= -80V, I_E= 0

-100

Collector Cutoff Current

MMBTA55

MMBTA56

V_CE= -60V, I_BO= 0V

V_CE= -80V, I_BO= 0V

I_CEX

-100

ON CHARACTERISTICS (Note 2)

I_C= -10mA, V_CE= -1.0V

h_FE

V_CE(SAT)

V_BE(SAT)

DC Current Gain

100

_C= -100mA, V_CE= -1.0V

I_C= -100mA, I_B= -10mA

I_C= -100mA, V_CE= -1.0V

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

-0.25

-1.2

V_CE= -1.0V, I_C= -100mA,

f = 100MHz

f_T

Current Gain-Bandwidth Product

MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30054 Rev. 4 - 2

1 of 2

MMBTA55 / MMBTA56

www.diodes.com

中文翻译

下载PDF

MMBTA56 替代型号

型号	品牌	替代类型	描述	数据表
MMBTA56	DIOTEC	类似代替	General Purpose Si-Epitaxial PlanarTransistors
MMBTA56LT1G	ONSEMI	功能相似	Driver Transistors PNP Silicon
MMBTA56-7-F	DIODES	功能相似	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

与MMBTA56相关器件

型号	品牌	获取价格	描述	数据表
MMBTA56/E9	VISHAY	获取价格	Transistor
MMBTA56_05	KEC	获取价格	EPITAXIAL PLANAR PNP TRANSISTOR
MMBTA56_10	UTC	获取价格	AMPLIFIER TRANSISTOR
MMBTA56-7	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA56-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA56-AE3-R	UTC	获取价格	AMPLIFIER TRANSISTOR PNP SILICON TRANSISTOR
MMBTA56-AH	SWST	获取价格	小信号晶体管
MMBTA56-AU	PANJIT	获取价格	NPN AND PNP HIGH VOLTAGE TRANSISTOR
MMBTA56D87Z	TI	获取价格	500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA56-E6327	INFINEON	获取价格	Transistor

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