Datasheet > MMBTA06_03

MMBTA06_03

更新时间： 2024-11-17 10:52:27

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	393K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBTA06_03 数据手册

SEMICONDUCTOR

MMBTA06

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

DRIVER STAGE AMPLIFIER APPLICATIONS.

VOLTAGE AMPLIFIER APPLICATIONS.

FEATURE

DIM MILLIMETERS

Complementary to MMBTA56.

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

SYMBOL

RATING

UNIT

0.20 MIN

1.00+0.20/-0.10

V_CBO

V_CEO

V_EBO

I_C

500

1. EMITTER

2. BASE

I_E

Emitter Current

-500

350

3. COLLECTOR

P_C*

T_j

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

SOT-23

T_stg

-55 150

* : Package Mounted On 99.5% Alumina 10

0.6mm.

Marking

Lot No.

Type Name

ADX

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP. MAX.

UNIT

V_CB=80V, I_E=0

100

I_CEO

V_CE=60V, I_B=0

Emitter Cut-off Current

100

V_(BR)CEO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

I_C=1mA, I_B=0

Collector-Emitter Breakdown Voltage

100

V_CE=1V, I_C=10mA

V_CE=1V, I_C=100mA

I_C=100mA, I_B=10mA

V_CE=1V, I_C=100mA

V_CE=2V, I_C=10mA

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

0.25

1.2

f_T

Transition Frequency

100

MHz

2003. 7. 21

Revision No : 3

1/2

中文翻译

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与MMBTA06_03相关器件

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MMBTA06-3L	BL Galaxy Electrical	获取价格	80V,0.5A,General Purpose NPN Bipolar Transistor
MMBTA06-7	DIODES	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
MMBTA06-7-F	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA06-AE3-R	UTC	获取价格	AMPLIFIER TRANSISTOR
MMBTA06-AH	SWST	获取价格	小信号晶体管
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