Datasheet > MMBTA06-T

MMBTA06-T

更新时间： 2024-02-16 19:03:26

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描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMBTA06-T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Base Number Matches：	1

MMBTA06-T 数据手册

MMBTA06

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(NPN)

FEATURES

* Power dissipation

PCM :

* Collector current

ICM :

0.3

0.5

W(Tamb=25^OC)

* Collector-base voltage

(BR)CBO

* Operating and storage junction temperature range

SOT-23

T ,Tstg:

-55^OC to +150^OC

COLLECTOR

MECHANICAL DATA

BASE

0.055(1.40)

Case: Molded plastic

0.047(1.20)

EMITTER

Epoxy: UL 94V-O rate flame retardant

Lead: MIL-STD-202E method 208C guaranteed

Mounting position: Any

0.006(0.15)

0.043(1.10)

0.035(0.90)

0.003(0.08)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.118(3.00)

0.110(2.80)

0.019(2.00)

0.071(1.80)

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

Collector - Base Breakdown Voltage (I =100 uA, I =0)

SYMBOL

MIN

TYP

MAX

UNITS

V(BR)CBO

Collector - Emitter Breakdown Voltage(IC= 1mA, IB=0)

V(BR)CEO

V(BR)EBO

Emitter - Base Breakdown Voltage (I = 100 uA, I = 0)

Collector Cut - Off Current (VCB= 80V, IE=0)

Collector Cut - Off Current (VCE= 60V, IB=0)

Collector Cut - Off Current (VEB= 3V, IC=0)

ICBO

ICEO

0.1

IEBO

DC Current Gain(VCE= 1V, IC= 100mA)

hFE

100

200

Collector - Emitter Saturation Voltage(IC= 100 mA, IB= 10mA)

VCE(sat)

0.25

Base - Emitter Saturation Voltage(IC=100mA, IB= 10mA)

Transition Frequency(VCE= 2V, IC= 10mA, f =100MHz)

VBE(sat)

1.2

100

MHz

Marking

1GM

2007-3

Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

12 3 4

中文翻译

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