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MMBTA06LT3G PDF预览

MMBTA06LT3G

更新时间: 2024-11-04 12:02:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管驱动
页数 文件大小 规格书
6页 114K
描述
Driver Transistors

MMBTA06LT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.5
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBTA06LT3G 数据手册

 浏览型号MMBTA06LT3G的Datasheet PDF文件第2页浏览型号MMBTA06LT3G的Datasheet PDF文件第3页浏览型号MMBTA06LT3G的Datasheet PDF文件第4页浏览型号MMBTA06LT3G的Datasheet PDF文件第5页浏览型号MMBTA06LT3G的Datasheet PDF文件第6页 
MMBTA05L, MMBTA06L,  
SMMBTA06L  
Driver Transistors  
NPN Silicon  
http://onsemi.com  
Features  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
1
Compliant  
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MMBTA05LT1  
60  
80  
1
MMBTA06LT1, SMMBTA06LT1  
2
CollectorBase Voltage  
MMBTA05LT1  
Vdc  
SOT23  
CASE 318  
STYLE 6  
60  
80  
MMBTA06LT1, SMMBTA06LT1  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current Continuous  
Electrostatic Discharge  
I
500  
mAdc  
C
MARKING DIAGRAMS  
ESD  
HBM Class 3B  
MM Class C  
CDM Class IV  
1H M G  
1GM M G  
THERMAL CHARACTERISTICS  
Characteristic  
G
G
Symbol  
Max  
Unit  
Total Device Dissipation FR5  
P
225  
mW  
D
MMBTA05LT1  
MMBTA06LT1,  
SMMBTA06L  
Board (Note 1) T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
1H, 1GM = Specific Device Code  
Thermal Resistance,  
JunctiontoAmbient  
R
556  
M
G
= Date Code*  
= PbFree Package  
q
JA  
(Note: Microdot may be in either location)  
Total Device Dissipation Alumina  
P
D
300  
mW  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Substrate, (Note 2) T = 25°C  
Derate above 25°C  
A
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
R
417  
q
JA  
JunctiontoAmbient  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
July, 2012 Rev. 8  
MMBTA05LT1/D  
 

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