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MMBTA11

更新时间: 2024-11-20 05:49:19
品牌 Logo 应用领域
商升特 - SEMTECH 晶体晶体管
页数 文件大小 规格书
1页 88K
描述
NPN Silicon Epitaxial Planar Transistor

MMBTA11 数据手册

  
MMBTA10 / MMBTA11  
NPN Silicon Epitaxial Planar Transistor  
VHF / UHF transistor  
SOT-23 Plastic Package  
Absolute Maximum Ratings (Ta = 25 oC)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
30  
25  
V
3
100  
V
mA  
mW  
Total Dissipation  
Ptot  
200  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
Ts  
- 55 to + 150  
O
Characteristics at Tamb = 25 C  
Parameter  
Symbol  
Min  
Max  
-
Unit  
DC Current Gain  
hFE  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
60  
-
V
at VCE = 10 V, IC = 4 mA  
Collector Base Breakdown Voltage  
at IC = 100 µA  
Collector Emitter Breakdown Voltage  
at IC = 1 mA  
Emitter Base Breakdown Voltage  
at IE = 10 µA  
Collector Cutoff Current  
at VCB = 25 V  
Emitter Cutoff Current  
at VEB = 2 V  
Collector Emitter Saturation Voltage  
at IC = 4 mA, IB = 0.4 mA  
Base-Emitter On Voltage  
at VCE = 10 V, IC = 4 mA  
Current Gain Bandwidth Product  
30  
-
-
25  
V
3
-
V
-
100  
100  
0.5  
0.95  
-
nA  
nA  
V
IEBO  
-
VCE(sat)  
VBE(on)  
fT  
-
-
650  
-
V
MHz  
pF  
at VCE = 10 V, IC = 4 mA, f = 100 MHz  
Collector Base Capacitance  
at VCB = 10 V, f = 1 MHz  
Ccb  
0.7  
Collector Base Feedback Capacitance  
VCB = 10 V, f = 1 MHz  
MMBTA10  
MMBTA11  
0.35  
0.6  
0.65  
0.9  
pF  
pF  
Crb  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 17/06/2006  

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