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MMBTA06LT1 PDF预览

MMBTA06LT1

更新时间: 2024-11-16 22:54:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管驱动
页数 文件大小 规格书
4页 85K
描述
Driver Transistors

MMBTA06LT1 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.08最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:0.225 W
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.25 VBase Number Matches:1

MMBTA06LT1 数据手册

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Order this document  
by MMBTA05LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
*Motorola Preferred Device  
1
BASE  
3
2
EMITTER  
1
MAXIMUM RATINGS  
2
Rating  
Symbol  
MMBTA05  
MMBTA06  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
V
CEO  
60  
60  
80  
80  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
V
Vdc  
CBO  
EBO  
EmitterBase Voltage  
V
4.0  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
500  
mAdc  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage (3)  
V
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
MMBTA05  
MMBTA06  
60  
80  
C
B
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
4.0  
Vdc  
Adc  
Adc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 60 Vdc, I = 0)  
I
0.1  
CES  
CBO  
CE  
B
Collector Cutoff Current  
I
(V  
CB  
(V  
CB  
= 60 Vdc, I = 0)  
MMBTA05  
MMBTA06  
0.1  
0.1  
E
= 80 Vdc, I = 0)  
E
1. FR5 = 1.0  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width 300 s, Duty Cycle  
0.75 0.062 in.  
2.0%.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

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