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MMBTA06-3L PDF预览

MMBTA06-3L

更新时间: 2024-11-20 17:01:59
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 395K
描述
80V,0.5A,General Purpose NPN Bipolar Transistor

MMBTA06-3L 数据手册

 浏览型号MMBTA06-3L的Datasheet PDF文件第2页浏览型号MMBTA06-3L的Datasheet PDF文件第3页浏览型号MMBTA06-3L的Datasheet PDF文件第4页 
NPN Silicon Epitaxial Planar Transistor  
MMBTA06-3L  
Features  
Epitaxial planar die construction  
Complementary PNP type available(MMBTA56-3L)  
Mechanical Data  
Case: SOT-23-3L  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-23-3L  
Ordering Information  
Part Number  
Package  
SOT-23-3L  
Shipping Quantity  
Marking Code  
1GM  
MMBTA06-3L  
3000 pcs / Tape & Reel  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
80  
Unit  
V
V
V
A
A
A
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current (Continuous)  
Collector Current (Peak)  
80  
4
0.5  
1
ICM  
Base Current  
IB  
0.2  
Thermal Characteristics  
Parameter  
Power Dissipation  
Symbol  
PD  
Value  
0.35  
Unit  
W
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Case *1  
Thermal Resistance Junction-to-Lead *1  
Junction Temperature Range  
RθJA  
RθJC  
RθJL  
TJ  
258  
°C /W  
°C /W  
°C /W  
°C  
142  
186  
-55 ~ +150  
-55 ~ +150  
Storage Temperature Range  
TSTG  
°C  
Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B  
STM0767A: May 2023 [2.0]  
www.gmesemi.com  
1

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