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MMBD4448 PDF预览

MMBD4448

更新时间: 2024-11-17 22:46:07
品牌 Logo 应用领域
美微科 - MCC 二极管开关
页数 文件大小 规格书
3页 95K
描述
Surface Mount Schottky Barrier Switching Diode 350mW

MMBD4448 数据手册

 浏览型号MMBD4448的Datasheet PDF文件第2页浏览型号MMBD4448的Datasheet PDF文件第3页 
M C C  
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MMBD4448  
Features  
Surface Mount  
Schottky Barrier  
Switching Diode  
350mW  
l
l
l
l
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
Mechanical Data  
l Case: SOT-23, Molded Plastic  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: See Diagram  
SOT-23  
A
D
l Marking: KA3  
B
C
Maximum Ratings @ 25oC Unless Otherwise Specified  
Characteristic  
Symbol  
VRM  
Value  
Unit  
V
F
E
Non-Repetitive Peak Reverse Volt.  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
VRRM  
VRWM  
VR  
75  
V
H
G
J
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
mA  
mA  
A
Forward Continuous Current(Note1)  
Average Rectified Output Current  
Non-Repetitive Peak @ t<=1.0s  
Forward Surge Current @ t=1.0us  
Power Dissipation(Note 1)  
500  
DIMENSIONS  
MM  
Io  
250  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
IFSM  
2
4
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
A
Pd  
R
350  
mW  
K/W  
oC  
Thermal Resistance(Note 1)  
Operation/Storage Temp. Range  
357  
F
G
H
J
.100  
1.12  
.180  
.51  
Tj, TSTG  
-55 to +150  
.085  
.37  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
K
Suggested Solder  
Pad Layout  
.031  
.800  
Charateristic  
Symbol Min  
Max  
Unit  
Test Cond.  
IF=5.0mA  
IF=10mA  
0.62 0.72  
Maximum Forward  
Voltage Drop  
VFM  
----- 0.855  
V
1
IF=100mA  
IF=150mA  
VR=75V  
.035  
.900  
1.25  
2.5  
.079  
2.000  
inches  
mm  
uA  
Maximum Peak  
Reverse Current  
IRM  
-----  
50  
30  
25  
4
uA VR=75V Tj=150oC  
uA VR=25V Tj=150oC  
nA  
VR=20V  
.037  
.950  
Junction Capacitance  
Cj  
-----  
-----  
pF VR=0V, f=1.0MHz  
ns  
.037  
.950  
Reverse Recovery Time  
trr  
4
Note: 1. Valid provided that terminals are kept at ambient temperature  
2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM  
www.mccsemi.com  

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