5秒后页面跳转
MMBD4448DWPT PDF预览

MMBD4448DWPT

更新时间: 2024-11-18 05:49:19
品牌 Logo 应用领域
力勤 - CHENMKO 二极管开关
页数 文件大小 规格书
2页 101K
描述
SWITCHING DIODE ARRAY

MMBD4448DWPT 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:NBase Number Matches:1

MMBD4448DWPT 数据手册

 浏览型号MMBD4448DWPT的Datasheet PDF文件第2页 
CHENMKO ENTERPRISE CO.,LTD  
MMBD4448DWPT  
SURFACE MOUNT  
SWITCHING DIODE ARRAY  
VOLTAGE 80 Volts CURRENT 250 mAmpere  
APPLICATION  
* Fast high speed switching  
FEATURE  
* Small surface mounting type. (SC-88/SOT-363)  
* High speed. (TRR=4.0nSec Max.)  
* Fast Switching Speed.  
SC-88/SOT-363  
* Ultra-Small Surface Mount Package.  
* For General Purpose Switching Applications.  
* High Conductance.  
(1)  
(6)  
(4)  
0.65  
2.0~2.2  
0.65  
1.2~1.4  
CONSTRUCTION  
(3)  
* Silicon epitaxial planar  
0.15~0.35  
1.15~1.35  
MARKING  
* DP  
0.08~0.15  
0.8~1.1  
0~0.1  
0.1 Min.  
2.15~2.45  
(4)  
(1)  
(3)  
(2)  
CIRCUIT  
SC-88/SOT-363  
Dimensions in millimeters  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VRM  
MMBD4448DWPT  
UNITS  
Volts  
Maximum Non-Repetitive Peak Reverse Voltage  
100  
Maximum Repetitive Peak Reverse Voltage  
Maximum Working Peak Reverse Voltage  
Maximum DC Blocking Voltage  
VRRM  
VRWM  
VDC  
80  
Volts  
Maximum RMS Voltage  
VRMS  
IO  
57  
Volts  
Maximum Average Forward Rectified Current  
Repetitive Peak Forward Current  
250  
500  
mAmps  
mAmps  
IFRM  
@1Sec  
2.0  
4.0  
Peak Forward Surge Current at 1uSec.  
Amps  
IFSM  
@1.0uSec  
Total Capacitance  
CT  
3.5  
4.0  
pF  
Maximum Reverse Recovery Time  
Maximum Thermal Resistance  
trr  
nSec  
oC/W  
R
JA  
625  
oC  
Maximum Operating and Storage Temperaturd Range  
TJ,TSTG  
-65 to +150  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MMBD4448DWPT  
UNITS  
Volts  
@ IF= 5.0 mA  
@ IF= 100 mA  
VR= 20V @TJ=25oC  
VR= 75V @TJ=150oC  
VR= 25V @TJ=150oC  
0.72  
1.0  
Maximum Instantaneous Forward Voltage  
VF  
IR  
25nA  
50  
30  
Maximum Average Reverse Current (Note 1)  
uAmps  
NOTES :  
2004-10  
1. Short duration test pulse used to minimize self-hesting effect.  

与MMBD4448DWPT相关器件

型号 品牌 获取价格 描述 数据表
MMBD4448DW-T MCC

获取价格

Rectifier Diode,
MMBD4448DW-T1 WTE

获取价格

Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-6
MMBD4448DW-T1-LF WTE

获取价格

Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
MMBD4448DW-TP MCC

获取价格

Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLAST
MMBD4448DW-TP MILL-MAX

获取价格

0.25 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC, 6 PIN
MMBD4448DW-TP-HF MCC

获取价格

Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, U
MMBD4448E SWST

获取价格

小信号开关二极管
MMBD4448EDW SWST

获取价格

小信号开关二极管
MMBD4448F SECOS

获取价格

Plastic-Encapsulated Switching Diode
MMBD4448FDW SWST

获取价格

小信号开关二极管