Datasheet > MMBD4448DW

MMBD4448DW

更新时间： 2024-11-21 10:52:47

品牌	Logo	应用领域
SECOS		二极管开关
页数	文件大小	规格书
2页	250K
描述
Surface Mount Switching Diode Arra

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MMBD4448DW 数据手册

MMBD4448DW

Surface Mount Switching Diode Array

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-363

FEATURES

Fast Switching Speed

8^o

.055(1.40)

.047(1.20)

Ultra-Small Surface Mount Package

High Conductance Power dissipation

.026TYP

(0.65TYP)

.021REF

(0.525)REF

MECHANICAL DATA

.053(1.35)

.045(1.15)

.096(2.45)

.085(2.15)

Case: SOT-363, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

.018(0.46)

.010(0.26)

Polarity: See Diagrams Below

Weight: 0.006 grams (approx.)

Mounting Position: Any

.014(0.35)

.006(0.15)

.003(0.08)

.087(2.20)

.079(2.00)

.004(0.10)

.000(0.00)

.043(1.10)

.035(0.90)

.039(1.00)

.035(0.90)

Dimensions in inches and (millimeters)

MMBD4448 DW Marking: KA3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

RMS Reverse Voltage

100

RRM

R(RMS)

Average Rectified out Current(Note 1)

Forward Continuous Current (Note 1)

250

500

°C/W

Thermal Resistance Junction to Ambient Air (Note1)

Storage Temperature Range

625

thJA

stg

–55 to +150

°C

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Symbol

Max

—

Unit

Characteristic

Min

Reverse Breakdown Voltage (Note 2)

V(BR)R

Forward Voltage (Note 2)

IF=5.0mA

0.62

—

0.72

0.855

1.0

IF=10mA

IF=50mA

IF=150mA

—

1.25

Reverse Current (Note 2)

VR=75V

—

2.5

VR=75V, Tj=150^OC

VR=25V, Tj=150^OC

VR=20V

—

Total Capacitance VR=0, f=1.0MHz

4.0

Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms

4.0

—

Note 2. Short duration test pulse used to minimize self-heating.

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jan-2006 Rev.B

Page 1 of 2

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