Datasheet > MMBD4448EDW

MMBD4448EDW

更新时间： 2024-11-19 14:53:03

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
4页	900K
描述
小信号开关二极管

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MMBD4448EDW 数据手册

MMBD4448EDW

Silicon Epitaxial Planar Switching Diode

Fast Switching Diode

1. Cathode4 2. NC

4. Cathode2 5. Anode 6.Cathode1

SOT-363 Plastic package

3.Cathode3

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

Value

100

Unit

Peak Reverse Voltage

Reverse Voltage

V_R

Average Rectified Forward Current

I_F(AV)

150

Forward Continuous Current

I_FM

300

0.5

at t = 1 s

at t = 1 ms

at t = 1 μs

Non-Repetitive Peak Forward Surge Current

I_FSM

Power Dissipation

P_d

T_j

200

150

Junction Temperature

Storage Temperature Range

T_stg

- 65 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Dated: 08/06/2023 Rev: 03

1 / 4

12 3 4

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