Datasheet > MMBD4448F

MMBD4448F

更新时间： 2024-11-21 12:20:19

品牌	Logo	应用领域
SECOS		二极管开关
页数	文件大小	规格书
2页	225K
描述
Plastic-Encapsulated Switching Diode

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MMBD4448F 数据手册

MMBD4448F

Plastic-Encapsulated Switching Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-323

DESCRIPTION

ꢀ

Fast switching speed

For general purpose switching applications

High conductance

Top View

C B

Surface mount package ideally suited for automatic insertion

MARKING: KA3

Millimeter

Min. Max.

1.05 REF.

0.20 REF.

Millimeter

REF.

Min.

0.080

1.15

1.60

2.30

Max.

0.180

1.45

1.80

2.70

0.80

1.00

0.25

0.40

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

SYMBOL

V_RM

VALUE

100

UNIT

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

4.0

I_O

@ t = 1.0µs

@ t = 1.0s

Peak Forward Surge Current

I_FSM

1.5

Power Dissipation

P_D

200

625

-65~150

°C/ W

°C

Thermal Resistance Junction to Ambient

Storage Temperature

R_θJA

T_STG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN.

0.62

MAX.

UNIT

TEST CONDITION

I_F= 5mA

V_F1

V_F2

V_F3

V_F4

I_R1

0.720

0.855

1.00

1.25

2.5

I_F= 10mA

Forward Voltage

I_F= 100mA

I_F= 150mA

µA

V_R= 75V

Reverse Current

I_R2

V_R= 20V

Capacitance Between Terminals

Reverse Recovery Time

C_T

V_R= 0V, f = 1MHz

I_F= I_R= 10mA, I_rr= 0.1 x I_R

R_L=100Ω

t_RR

25-Dec-2009 Rev. A

Page 1 of 2

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