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MMBD4448HADWPT PDF预览

MMBD4448HADWPT

更新时间: 2024-11-21 10:52:47
品牌 Logo 应用领域
力勤 - CHENMKO 二极管开关
页数 文件大小 规格书
2页 98K
描述
SWITCHING DIODE ARRAY

MMBD4448HADWPT 数据手册

 浏览型号MMBD4448HADWPT的Datasheet PDF文件第2页 
CHENMKO ENTERPRISE CO.,LTD  
MMBD4448HADWPT  
SURFACE MOUNT  
SWITCHING DIODE ARRAY  
VOLTAGE 80 Volts CURRENT 250 mAmpere  
APPLICATION  
* Fast high speed switching  
FEATURE  
* Small surface mounting type. (SC-88/SOT-363)  
* High speed. (TRR=4.0nSec Max.)  
* Fast Switching Speed.  
SC-88/SOT-363  
* Ultra-Small Surface Mount Package.  
* For General Purpose Switching Applications.  
* High Conductance.  
(1)  
(6)  
0.65  
0.65  
1.2~1.4  
2.0~2.2  
CONSTRUCTION  
(3)  
(4)  
* Silicon epitaxial planar  
0.15~0.35  
1.15~1.35  
MARKING  
* DS  
0.08~0.15  
0.8~1.1  
0~0.1  
0.1 Min.  
6
1
4
3
2.15~2.45  
CIRCUIT  
SC-88/SOT-363  
Dimensions in millimeters  
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VRM  
MMBD4448HADWPT  
UNITS  
Volts  
Maximum Non-Repetitive Peak Reverse Voltage  
100  
Maximum Repetitive Peak Reverse Voltage  
Maximum Working Peak Reverse Voltage  
Maximum DC Blocking Voltage  
VRRM  
VRWM  
VDC  
80  
Volts  
Maximum RMS Voltage  
VRMS  
IO  
57  
Volts  
Maximum Average Forward Rectified Current  
Repetitive Peak Forward Current  
250  
500  
mAmps  
mAmps  
IFRM  
@1Sec  
2.0  
4.0  
Peak Forward Surge Current at 1uSec.  
Amps  
IFSM  
@1.0uSec  
Total Capacitance  
CT  
3.5  
4.0  
pF  
Maximum Reverse Recovery Time  
Maximum Thermal Resistance  
trr  
nSec  
oC/W  
R
JA  
625  
oC  
Maximum Operating and Storage Temperaturd Range  
TJ,TSTG  
-65 to +150  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MMBD4448HADWPT  
UNITS  
Volts  
@ IF= 5.0 mA  
@ IF= 100 mA  
VR= 20V @TJ=25oC  
VR= 75V @TJ=150oC  
VR= 25V @TJ=150oC  
0.72  
1.0  
Maximum Instantaneous Forward Voltage  
VF  
IR  
25nA  
50  
30  
Maximum Average Reverse Current (Note 1)  
uAmps  
NOTES :  
2003-12  
1. Short duration test pulse used to minimize self-hesting effect.  

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