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MMBD4448H_08 PDF预览

MMBD4448H_08

更新时间: 2024-09-23 10:52:47
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 173K
描述
SURFACE MOUNT SWITCHING DIODE

MMBD4448H_08 数据手册

 浏览型号MMBD4448H_08的Datasheet PDF文件第2页浏览型号MMBD4448H_08的Datasheet PDF文件第3页 
MMBD4448H  
SURFACE MOUNT SWITCHING DIODE  
Features  
Mechanical Data  
Fast Switching Speed  
Case: SOT-23  
Surface Mount Package Ideally Suited for Automated Insertion  
For General Purpose Switching Applications  
High Conductance  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Lead Free/RoHS Compliant (Note 3)  
Polarity: See Diagram  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.008 grams (approximate)  
SOT-23  
TOP VIEW  
Internal Schematic  
TOP VIEW  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Non-Repetitive Peak Reverse Voltage  
Symbol  
VRM  
Value  
100  
Unit  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
80  
V
RMS Reverse Voltage  
57  
V
VR(RMS)  
IFM  
Forward Continuous Current  
(Note 1)  
(Note 1)  
500  
250  
4.0  
2.0  
mA  
mA  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
IO  
@ t = 1.0μs  
@ t = 1.0s  
A
IFSM  
Thermal Characteristics  
Characteristic  
Power Dissipation  
Symbol  
PD  
Value  
350  
Unit  
mW  
(Note 1)  
(Note 1)  
Thermal Resistance Junction to Ambient Air  
Operating and Storage Temperature Range  
357  
°C/W  
°C  
Rθ  
JA  
-65 to +150  
TJ , TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Reverse Breakdown Voltage  
Symbol  
V(BR)R  
Min  
80  
Max  
Unit  
V
Test Condition  
IR = 2.5μA  
(Note 2)  
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
0.62  
0.72  
0.855  
1.0  
Forward Voltage  
Reverse Current  
V
VF  
1.25  
VR = 70V  
nA  
μA  
μA  
nA  
100  
50  
30  
VR = 75V, TJ = 150°C  
VR = 25V, TJ = 150°C  
VR = 20V  
(Note 2)  
IR  
25  
Total Capacitance  
Reverse Recovery Time  
3.5  
4.0  
pF  
ns  
CT  
trr  
VR = 6V, f = 1.0MHz  
VR = 6V, IF = 5mA  
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
1 of 3  
www.diodes.com  
April 2008  
© Diodes Incorporated  
MMBD4448H  
Document number: DS30176 Rev. 9 - 2  

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