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MMBD4448DW-TP PDF预览

MMBD4448DW-TP

更新时间: 2024-11-18 19:44:15
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 279K
描述
Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6

MMBD4448DW-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:1.29配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

MMBD4448DW-TP 数据手册

 浏览型号MMBD4448DW-TP的Datasheet PDF文件第2页浏览型号MMBD4448DW-TP的Datasheet PDF文件第3页 
M C C  
TM  
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MMBD4448DW  
Micro Commercial Components  
Features  
·
For General Purpose Switching Applications  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Ultra-Small Surface Mount Package  
200mW  
Switching Diodes  
·
Epoxy meets UL 94 V-0 flammability rating  
·
x
Moisture Sensitivity Level 1  
High Conductance, Power Dissipation  
SOT-363  
x
Fast Switching Speed  
G
Maximum Ratings  
Symbol  
VRM  
VRRM  
VRWM  
VR  
Rating  
Rating  
100  
Unit  
V
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
C
B
75  
V
VR(RMS)  
IFM  
IO  
RMS Reverse Voltage  
Forward Continuous Current  
Average Rectified Output Current  
53  
500  
250  
V
mA  
mA  
A
H
Peak Forward Surge Current @1.0Is  
4.0  
2.0  
IFSM  
A
M
@1.0s  
K
Thermal Resistance Junction to Ambient  
R/W  
mW  
R
R
E
625  
200  
150  
J
JA  
D
PD  
TJ  
Power dissipation  
Junction Temperature  
L
Storage Temperature  
R
TSTG  
-65 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Test Conditions  
DIMENSIONS  
V(BR)  
Reverse Breakdown Voltage  
75V  
---  
IR=10IA  
INCHES  
MM  
2.5IA  
50IA  
35IA  
25nA  
VR=75V  
DIM  
A
MIN  
.006  
.045  
.085  
MAX  
.014  
.053  
.096  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
VR=75V, TJ=150R  
VR=25V, TJ=150R  
VR=20V  
Reverse Voltage Leakage  
Current  
IR  
---  
B
C
D
G
H
J
.026  
0.65Nominal  
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
---  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
0.6  
---  
---  
---  
---  
0.72V  
0.855V  
1.0V  
IF=5.0mA  
IF=10mA  
IF=50mA  
IF=150mA  
VR=0V, f=1MHZ  
IR==IF=10mA,  
Irr=0.1xIR,  
RL=100=  
VF  
Forward Voltage  
K
.035  
.010  
.003  
0.90  
0.26  
0.08  
1.25V  
4.0pF  
L
M
CT  
trr  
Total Capacitance  
Reverse Recovery Time  
---  
4.0ns  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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