Datasheet > MMBD4448DW_1

MMBD4448DW_1

更新时间： 2024-11-21 04:39:31

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
3页	67K
描述
SURFACE MOUNT SWITCHING DIODE

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中文翻译

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数据手册

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MMBD4448DW_1 数据手册

MMBD4448DW

SURFACE MOUNT SWITCHING DIODE

Lead-free

Features

Fast Switching Speed

SOT-363

Min

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

Dim

Max

0.30

1.35

2.20

0.10

Ultra Miniature Package

1.15

Lead Free/RoHS Compliant (Note 3)

2.00

0.65 Nominal

Mechanical Data

0.30

1.80

0.40

2.20

0.10

1.00

0.40

0.25

8°

Case: SOT-363

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

0.90

0.25

0.10

0°

C₁

A₂

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

A₁

C₂

Polarity: See Diagram

All Dimensions in mm

TOP VIEW

Marking: KA3 (See Page 3)

Weight: 0.006 grams (approx.)

@ T = 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

Unit

V_RM

Non-Repetitive Peak Reverse Voltage

100

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

Non-Repetitive Peak Forward Surge Current

500

250

I_O

@ t < 1ms

@ t < 1s

I_FSM

P_d

Power Dissipation (Note 1)

200

625

°C/W

°C

R_qJA

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

T_j, T_STG

-65 to +150

Electrical Characteristics ^{@ T = 25°C unless otherwise specified}

Characteristic

Symbol

Min

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 2)

I_R= 10mA

0.62

0.720

I_F= 5.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

0.855

V_F

Forward Voltage

1.0

1.25

V_R= 75V

2.5

_R= 75V, T_j= 150°C

_R= 25V, T_j= 150°C

_R= 20V

I_R

Reverse Current (Note 2)

V_R= 0, f = 1.0MHz

C_T

t_rr

Total Capacitance

4.0

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating.

3. No purposefully added lead.

DS31035 Rev. 6 - 2

1 of 3

MMBD4448DW

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

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与MMBD4448DW_1相关器件

型号	品牌	获取价格	描述	数据表
MMBD4448DW_13	MCC	获取价格	200mW Switching Diodes
MMBD4448DW-13	DIODES	获取价格	Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-6
MMBD4448DW-7	DIODES	获取价格	Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-6
MMBD4448DW-7-F	DIODES	获取价格	SURFACE MOUNT SWITCHING DIODE
MMBD4448DWPT	CHENMKO	获取价格	SWITCHING DIODE ARRAY
MMBD4448DW-T	MCC	获取价格	Rectifier Diode,
MMBD4448DW-T1	WTE	获取价格	Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-6
MMBD4448DW-T1-LF	WTE	获取价格	Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
MMBD4448DW-TP	MCC	获取价格	Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLAST
MMBD4448DW-TP	MILL-MAX	获取价格	0.25 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC, 6 PIN

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